Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)

Linghang Wang; Wanqi Jie

doi:10.1016/j.jcrysgro.2006.01.002

Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)

Linghang Wang, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The photoelectronic single crystals of mercury indium telluride (MIT) have been successfully grown by vertical Bridgman method (VB) at the optimized growth conditions. The energy band gap of MIT was authenticated to be 0.73 eV. The crystal was determined through the X-ray diffraction to be defect zinc-blende structure with the space group F4̄3m. The infrared transmittance of the crystal in the region from 400 to 4000 cm^-1 was determined by FT-IR to be 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption.

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	Journal of Crystal Growth
Volume	290
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.01.002
State	Published - 15 Apr 2006

Keywords

A1. X-ray diffraction
A2. Crystal growth from melt
A2. Vertical Bridgman method
B2. Mercury indium telluride
B2. Semiconductor materials
B3. Near-infrared photovoltaic detector

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.jcrysgro.2006.01.002

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title = "Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)",

abstract = "The photoelectronic single crystals of mercury indium telluride (MIT) have been successfully grown by vertical Bridgman method (VB) at the optimized growth conditions. The energy band gap of MIT was authenticated to be 0.73 eV. The crystal was determined through the X-ray diffraction to be defect zinc-blende structure with the space group F{\=4}3m. The infrared transmittance of the crystal in the region from 400 to 4000 cm-1 was determined by FT-IR to be 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption.",

keywords = "A1. X-ray diffraction, A2. Crystal growth from melt, A2. Vertical Bridgman method, B2. Mercury indium telluride, B2. Semiconductor materials, B3. Near-infrared photovoltaic detector",

author = "Linghang Wang and Wanqi Jie",

year = "2006",

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doi = "10.1016/j.jcrysgro.2006.01.002",

language = "英语",

volume = "290",

pages = "203--206",

journal = "Journal of Crystal Growth",

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T1 - Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)

AU - Wang, Linghang

AU - Jie, Wanqi

PY - 2006/4/15

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N2 - The photoelectronic single crystals of mercury indium telluride (MIT) have been successfully grown by vertical Bridgman method (VB) at the optimized growth conditions. The energy band gap of MIT was authenticated to be 0.73 eV. The crystal was determined through the X-ray diffraction to be defect zinc-blende structure with the space group F4̄3m. The infrared transmittance of the crystal in the region from 400 to 4000 cm-1 was determined by FT-IR to be 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption.

AB - The photoelectronic single crystals of mercury indium telluride (MIT) have been successfully grown by vertical Bridgman method (VB) at the optimized growth conditions. The energy band gap of MIT was authenticated to be 0.73 eV. The crystal was determined through the X-ray diffraction to be defect zinc-blende structure with the space group F4̄3m. The infrared transmittance of the crystal in the region from 400 to 4000 cm-1 was determined by FT-IR to be 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption.

KW - A1. X-ray diffraction

KW - A2. Crystal growth from melt

KW - A2. Vertical Bridgman method

KW - B2. Mercury indium telluride

KW - B2. Semiconductor materials

KW - B3. Near-infrared photovoltaic detector

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DO - 10.1016/j.jcrysgro.2006.01.002

M3 - 文章

AN - SCOPUS:33645017735

SN - 0022-0248

VL - 290

SP - 203

EP - 206

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)

Abstract

Keywords

UN SDGs

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