Resistive switching properties in CdZnTe films

Gangqiang Zha; Yun Lin; Dongmei Zeng; Tingting Tan; Wanqi Jie

doi:10.1063/1.4907973

Resistive switching properties in CdZnTe films

Gangqiang Zha, Yun Lin, Dongmei Zeng, Tingting Tan, Wanqi Jie

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The ternary II-VI compound semiconductor cadmium zinc telluride (CdZnTe) has bi-stable conduction characteristics. In this letter, CdZnTe films are grown on indium tin oxide (ITO) substrates by radio frequency magnetron sputtering. The current-voltage characteristics show that there is resistive switching in a structure consisting of an 800-nm-thick CdZnTe film, an Au Schottky contact, and an ITO bottom electrode. The electroresistance in Au/CdZnTe/ITO may be related to the polarization of the CdZnTe film and the Schottky contact.

Original language	English
Article number	062103
Journal	Applied Physics Letters
Volume	106
Issue number	6
DOIs	https://doi.org/10.1063/1.4907973
State	Published - 9 Feb 2015

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title = "Resistive switching properties in CdZnTe films",

abstract = "The ternary II-VI compound semiconductor cadmium zinc telluride (CdZnTe) has bi-stable conduction characteristics. In this letter, CdZnTe films are grown on indium tin oxide (ITO) substrates by radio frequency magnetron sputtering. The current-voltage characteristics show that there is resistive switching in a structure consisting of an 800-nm-thick CdZnTe film, an Au Schottky contact, and an ITO bottom electrode. The electroresistance in Au/CdZnTe/ITO may be related to the polarization of the CdZnTe film and the Schottky contact.",

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T1 - Resistive switching properties in CdZnTe films

AU - Zha, Gangqiang

AU - Lin, Yun

AU - Zeng, Dongmei

AU - Tan, Tingting

AU - Jie, Wanqi

PY - 2015/2/9

Y1 - 2015/2/9

N2 - The ternary II-VI compound semiconductor cadmium zinc telluride (CdZnTe) has bi-stable conduction characteristics. In this letter, CdZnTe films are grown on indium tin oxide (ITO) substrates by radio frequency magnetron sputtering. The current-voltage characteristics show that there is resistive switching in a structure consisting of an 800-nm-thick CdZnTe film, an Au Schottky contact, and an ITO bottom electrode. The electroresistance in Au/CdZnTe/ITO may be related to the polarization of the CdZnTe film and the Schottky contact.

AB - The ternary II-VI compound semiconductor cadmium zinc telluride (CdZnTe) has bi-stable conduction characteristics. In this letter, CdZnTe films are grown on indium tin oxide (ITO) substrates by radio frequency magnetron sputtering. The current-voltage characteristics show that there is resistive switching in a structure consisting of an 800-nm-thick CdZnTe film, an Au Schottky contact, and an ITO bottom electrode. The electroresistance in Au/CdZnTe/ITO may be related to the polarization of the CdZnTe film and the Schottky contact.

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DO - 10.1063/1.4907973

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SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Resistive switching properties in CdZnTe films

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