Research on optical reflectance and infrared emissivity of TiN_x films depending on sputtering pressure

TiN_x thin films were deposited on glass substrates using direct current reactive magnetron sputtering, and effects of sputtering pressure on optical reflectance and infrared emissivity of TiN_x films were studied. The results indicated that sputtering pressure was a key factor to affect the optical reflectance and infrared emissivity of TiN_x films in this study. When sputtering pressure varied from 0.3 Pa to 1.2 Pa, an average reflectance of less than 25% in the visible range was obtained for the prepared films. With the working pressure rise, the resistivity of TiN_x films went up. Meanwhile, the infrared emissivity of the films increased. As sputtering pressure was 0.3 Pa, the infrared emissivity in the wavelength of 3–5 and 8–14 μm of TiN_x film with dark color and low optical reflectance was less than 0.2.