Abstract
Using 940 nm diode laser as pumping source, a passively Q-switched Yb:YAG thin disk laser by Cr4+:YAG was realized. The Yb:YAG disk with 500 μm thickness was employed, the Yb3+ atom fraction is 10%. The distribution of temperature in Yb:YAG disk with direct water cooling and SiC cooling with different thickness was theoretically simulated, respectively. The maximum output power of 2.8 W at 1030 nm was obtained with 800 μm SiC cooling, the output power has increased by 40% than that obtained with direct water cooling. The initial transmission of Cr4+:YAG crystal and the output coupling rate were optimized by Degnan's theory. With the initial transmission of Cr4+:YAG crystal of 93% and the output coupling rate of 10%, a stable pulse train of 1.95 W averaged output power with a pulse energy of 1.2 mJ and pulse width of 74 ns were obtained with 800 μm SiC cooling. The repetition rate is 1.6 kHz, the slope efficiency is 18.1%, and the beam quality Mx2=1.622, My2=1.616.
Original language | English |
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Article number | 0314009 |
Journal | Guangzi Xuebao/Acta Photonica Sinica |
Volume | 45 |
Issue number | 3 |
DOIs | |
State | Published - 1 Mar 2016 |
Externally published | Yes |
Keywords
- Cr:YAG
- Lasers
- Passively Q-switched
- SiC cooling
- Solid state laser
- Thin disk laser
- Yb:YAG