Quality improvement of CdMnTe:In single crystals by an effective post-growth annealing

Pengfei Yu, Yadong Xu, Lijun Luan, Yuanyuan Du, Jiahong Zheng, Hui Li, Wanqi Jie

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

In this paper, an effective annealing method in which CdMnTe:In (CMT:In) single crystals were coated with CMT powders of the same composition was used to improve the crystal quality of CMT:In crystals. The results indicated that the density of Te inclusions decreased as the annealing time increased. The resistivity and IR transmittance of annealed CMT:In crystals were enhanced obviously. The resistivity of 120 h annealed crystal increased even two orders of magnitude. The reduction of full-width at-half-maximum (FWHM) and the increase of the intensity of X-ray rocking curve indicated an improvement of the crystal quality. PL measurements also showed the crystal quality improved after annealing. No characteristic peak of 241Am γ-ray could be observed in the detector fabricated with as-grown crystal. Remarkably, for the detector fabricated with annealed crystals, the peak of 241Am γ-ray appeared. And the energy resolution and μτ value were improved as the annealing time increased. Specially, 120 h annealed CMT:In crystal with 10.11% energy resolution and 1.20×10−3 cm2/V μτ value has the best detector performance.

Original languageEnglish
Pages (from-to)194-199
Number of pages6
JournalJournal of Crystal Growth
Volume451
DOIs
StatePublished - 1 Oct 2016

Keywords

  • A1. Characterization
  • A2. Bridgman technique
  • B1. Cadmium compounds
  • B2 Semiconducting II–VI materials

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