Abstract
The polycrystalline material of mercury indium telluride (MIT) was synthesized by means of a direct reaction with high purity elements of Hg, In and Te. The MIT crystal with dimensions of Ø15 mm×175 mm was successfully grown by using vertical Bridgman method with the synthesized polycrystalline material in a pre-designed crucible. The as-grown crystal was analyzed by powder X-ray diffraction technology and determined to be single phase with defect zinc-blende structure and space group F43m. The rocking curve of the as-grown crystal show that the crystal is a single crystal with high quality. The abnormal thermal behavior of Hg overflow can be found in MIT crystal through DSC and TG analysis, which is of great importance to crystal growth as well as device fabrication and application.
Original language | English |
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Pages (from-to) | 863-865+870 |
Journal | Cailiao Kexue yu Gongyi/Material Science and Technology |
Volume | 17 |
Issue number | 6 |
State | Published - Dec 2009 |
Keywords
- Crystal growth
- Mercury indium telluride
- NIR photovoltaic detector
- Semiconductor materials
- Vertical Bridgman method