TY - JOUR
T1 - Preparation and Performance of Si3N4 Hollow Microspheres by the Template Method and Carbothermal Reduction Nitridation
AU - Zhao, Kai
AU - Cheng, Laifei
AU - Ye, Fang
AU - Cheng, Shuo
AU - Cui, Xuefeng
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/10/23
Y1 - 2019/10/23
N2 - Silicon nitride (Si3N4) hollow microspheres with smaller particle size and narrower distribution can be used to prepare closed-cell ceramics as the pore-forming agent to improve heat insulation performance and wave-transparent performance of porous Si3N4 ceramics. In this work, Si3N4 hollow microspheres with a diameter of about 1 μm and a wall thickness of approximately 150 nm were prepared by using the template method combined with the carbothermal reduction nitridation method. The optimum preparation temperature of the Si3N4 hollow microspheres is 1450 °C. The morphology, microstructure, and phase composition of the prepared Si3N4 hollow microspheres were characterized. The formation mechanism of the Si3N4 hollow microspheres was discussed. The dielectric properties of Si3N4 hollow microspheres were measured using the waveguide method at 8.2-12.4 GHz. The results show that the wave-transparent performance of the Si3N4 hollow microspheres is similar to those of α-Si3N4 particles. It can be used as the pore-forming agent or matrix for preparing lightweight, heat-insulating, wave-transparent, and high-strength porous Si3N4 ceramics.
AB - Silicon nitride (Si3N4) hollow microspheres with smaller particle size and narrower distribution can be used to prepare closed-cell ceramics as the pore-forming agent to improve heat insulation performance and wave-transparent performance of porous Si3N4 ceramics. In this work, Si3N4 hollow microspheres with a diameter of about 1 μm and a wall thickness of approximately 150 nm were prepared by using the template method combined with the carbothermal reduction nitridation method. The optimum preparation temperature of the Si3N4 hollow microspheres is 1450 °C. The morphology, microstructure, and phase composition of the prepared Si3N4 hollow microspheres were characterized. The formation mechanism of the Si3N4 hollow microspheres was discussed. The dielectric properties of Si3N4 hollow microspheres were measured using the waveguide method at 8.2-12.4 GHz. The results show that the wave-transparent performance of the Si3N4 hollow microspheres is similar to those of α-Si3N4 particles. It can be used as the pore-forming agent or matrix for preparing lightweight, heat-insulating, wave-transparent, and high-strength porous Si3N4 ceramics.
KW - SiN hollow microspheres
KW - carbothermal reduction nitridation reaction
KW - dielectric properties
KW - formation mechanism
KW - template method
UR - http://www.scopus.com/inward/record.url?scp=85073458859&partnerID=8YFLogxK
U2 - 10.1021/acsami.9b11336
DO - 10.1021/acsami.9b11336
M3 - 文章
C2 - 31564095
AN - SCOPUS:85073458859
SN - 1944-8244
VL - 11
SP - 39054
EP - 39061
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 42
ER -