Preparation and electrical properties of BST thick film deposited by electrophoretic deposition method

Yun Fei Fu; Hui Qing Fan; Yong Li Deng; Jin Chen

doi:10.3724/SP.J.1077.2008.00687

Preparation and electrical properties of BST thick film deposited by electrophoretic deposition method

Yun Fei Fu, Hui Qing Fan, Yong Li Deng, Jin Chen

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Ba_0.6Sr_0.4TiO₃ (BST40) thick film with thickness of 33 μm was prepared by electrophoretic deposition method on Pt/Ti/SiO₂/Si substrate using the BST40 nano powders as precursor. A high pressure treatment process was introduced in order to increase the density and decrease the sintering temperature of the film. The composition and surface morphology of the BST40 thick film were characterized. The ε-V curve of the BST40 thick film was measured. The leakage current density was tested and hysteresis loops of the thick film were measured at different temperatures. The results show that a dense and no crack surface are formed after sintering at 950°C. A tunability of 59.2% is calculated according to the ε-V curve. The leakage current is less than 100 μA/cm 2 when the applied voltage shifts from -25 V to 25 V. The remnant polarization is 1.06 μC/cm2 at the temperature of 0°C and the frequency of 1 kHz.

Original language	English
Pages (from-to)	687-690
Number of pages	4
Journal	Wuji Cailiao Xuebao/Journal of Inorganic Materials
Volume	23
Issue number	4
DOIs	https://doi.org/10.3724/SP.J.1077.2008.00687
State	Published - Jul 2008

Keywords

BST thick film
EPD
Remnant polarization
Tunability

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10.3724/SP.J.1077.2008.00687

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@article{6e4b47be31624c13a772eda3ef866dca,

title = "Preparation and electrical properties of BST thick film deposited by electrophoretic deposition method",

abstract = "Ba0.6Sr0.4TiO3 (BST40) thick film with thickness of 33 μm was prepared by electrophoretic deposition method on Pt/Ti/SiO2/Si substrate using the BST40 nano powders as precursor. A high pressure treatment process was introduced in order to increase the density and decrease the sintering temperature of the film. The composition and surface morphology of the BST40 thick film were characterized. The ε-V curve of the BST40 thick film was measured. The leakage current density was tested and hysteresis loops of the thick film were measured at different temperatures. The results show that a dense and no crack surface are formed after sintering at 950°C. A tunability of 59.2% is calculated according to the ε-V curve. The leakage current is less than 100 μA/cm 2 when the applied voltage shifts from -25 V to 25 V. The remnant polarization is 1.06 μC/cm2 at the temperature of 0°C and the frequency of 1 kHz.",

keywords = "BST thick film, EPD, Remnant polarization, Tunability",

author = "Fu, {Yun Fei} and Fan, {Hui Qing} and Deng, {Yong Li} and Jin Chen",

year = "2008",

month = jul,

doi = "10.3724/SP.J.1077.2008.00687",

language = "英语",

volume = "23",

pages = "687--690",

journal = "Wuji Cailiao Xuebao/Journal of Inorganic Materials",

issn = "1000-324X",

publisher = "Science Press ",

number = "4",

}

TY - JOUR

T1 - Preparation and electrical properties of BST thick film deposited by electrophoretic deposition method

AU - Fu, Yun Fei

AU - Fan, Hui Qing

AU - Deng, Yong Li

AU - Chen, Jin

PY - 2008/7

Y1 - 2008/7

N2 - Ba0.6Sr0.4TiO3 (BST40) thick film with thickness of 33 μm was prepared by electrophoretic deposition method on Pt/Ti/SiO2/Si substrate using the BST40 nano powders as precursor. A high pressure treatment process was introduced in order to increase the density and decrease the sintering temperature of the film. The composition and surface morphology of the BST40 thick film were characterized. The ε-V curve of the BST40 thick film was measured. The leakage current density was tested and hysteresis loops of the thick film were measured at different temperatures. The results show that a dense and no crack surface are formed after sintering at 950°C. A tunability of 59.2% is calculated according to the ε-V curve. The leakage current is less than 100 μA/cm 2 when the applied voltage shifts from -25 V to 25 V. The remnant polarization is 1.06 μC/cm2 at the temperature of 0°C and the frequency of 1 kHz.

AB - Ba0.6Sr0.4TiO3 (BST40) thick film with thickness of 33 μm was prepared by electrophoretic deposition method on Pt/Ti/SiO2/Si substrate using the BST40 nano powders as precursor. A high pressure treatment process was introduced in order to increase the density and decrease the sintering temperature of the film. The composition and surface morphology of the BST40 thick film were characterized. The ε-V curve of the BST40 thick film was measured. The leakage current density was tested and hysteresis loops of the thick film were measured at different temperatures. The results show that a dense and no crack surface are formed after sintering at 950°C. A tunability of 59.2% is calculated according to the ε-V curve. The leakage current is less than 100 μA/cm 2 when the applied voltage shifts from -25 V to 25 V. The remnant polarization is 1.06 μC/cm2 at the temperature of 0°C and the frequency of 1 kHz.

KW - BST thick film

KW - EPD

KW - Remnant polarization

KW - Tunability

UR - http://www.scopus.com/inward/record.url?scp=48549096769&partnerID=8YFLogxK

U2 - 10.3724/SP.J.1077.2008.00687

DO - 10.3724/SP.J.1077.2008.00687

M3 - 文章

AN - SCOPUS:48549096769

SN - 1000-324X

VL - 23

SP - 687

EP - 690

JO - Wuji Cailiao Xuebao/Journal of Inorganic Materials

JF - Wuji Cailiao Xuebao/Journal of Inorganic Materials

IS - 4

ER -

Preparation and electrical properties of BST thick film deposited by electrophoretic deposition method

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