Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing

Pengfei Yu; Wanqi Jie

doi:10.1016/j.jlumin.2013.10.016

Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing

Pengfei Yu, Wanqi Jie

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

High-resistivity In-doped CdZnTe (CZT:In) single crystals were obtained by annealing under Te atmosphere. Photoluminescence spectrum was used to investigate annealed CZT:In single crystals. The results indicated that (D ⁰, X) peak which is related to the crystal quality appeared after annealing. The donor-acceptor pair peak DAP mainly originated from the complex consisted of the donor In⁺_Cd and the acceptor [In ⁺_CdV^2-_Cd]^-. The intensity of DAP peak decreased, which might suggest that the impurities were removed. Moreover, D_complex peak containing two peaks for as-grown CZT:In consisted of Cd vacancy-related (D₁) and dislocation-related (D ₂) defects. However, the intensity of D₂ peak was very low because of the elimination of Cd inclusions after annealing. And the intensity of D₁ peak increased because of the increase of Cd vacancies by evaporating for a long time.

Original language	English
Pages (from-to)	382-386
Number of pages	5
Journal	Journal of Luminescence
Volume	146
DOIs	https://doi.org/10.1016/j.jlumin.2013.10.016
State	Published - 2014

Keywords

Annealing
Cd vacancy
CdZnTe:In
Photoluminescence
Te atmosphere

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title = "Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing",

abstract = "High-resistivity In-doped CdZnTe (CZT:In) single crystals were obtained by annealing under Te atmosphere. Photoluminescence spectrum was used to investigate annealed CZT:In single crystals. The results indicated that (D 0, X) peak which is related to the crystal quality appeared after annealing. The donor-acceptor pair peak DAP mainly originated from the complex consisted of the donor In+Cd and the acceptor [In +CdV2-Cd]-. The intensity of DAP peak decreased, which might suggest that the impurities were removed. Moreover, Dcomplex peak containing two peaks for as-grown CZT:In consisted of Cd vacancy-related (D1) and dislocation-related (D 2) defects. However, the intensity of D2 peak was very low because of the elimination of Cd inclusions after annealing. And the intensity of D1 peak increased because of the increase of Cd vacancies by evaporating for a long time.",

keywords = "Annealing, Cd vacancy, CdZnTe:In, Photoluminescence, Te atmosphere",

author = "Pengfei Yu and Wanqi Jie",

year = "2014",

doi = "10.1016/j.jlumin.2013.10.016",

language = "英语",

volume = "146",

pages = "382--386",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing

AU - Yu, Pengfei

AU - Jie, Wanqi

PY - 2014

Y1 - 2014

N2 - High-resistivity In-doped CdZnTe (CZT:In) single crystals were obtained by annealing under Te atmosphere. Photoluminescence spectrum was used to investigate annealed CZT:In single crystals. The results indicated that (D 0, X) peak which is related to the crystal quality appeared after annealing. The donor-acceptor pair peak DAP mainly originated from the complex consisted of the donor In+Cd and the acceptor [In +CdV2-Cd]-. The intensity of DAP peak decreased, which might suggest that the impurities were removed. Moreover, Dcomplex peak containing two peaks for as-grown CZT:In consisted of Cd vacancy-related (D1) and dislocation-related (D 2) defects. However, the intensity of D2 peak was very low because of the elimination of Cd inclusions after annealing. And the intensity of D1 peak increased because of the increase of Cd vacancies by evaporating for a long time.

AB - High-resistivity In-doped CdZnTe (CZT:In) single crystals were obtained by annealing under Te atmosphere. Photoluminescence spectrum was used to investigate annealed CZT:In single crystals. The results indicated that (D 0, X) peak which is related to the crystal quality appeared after annealing. The donor-acceptor pair peak DAP mainly originated from the complex consisted of the donor In+Cd and the acceptor [In +CdV2-Cd]-. The intensity of DAP peak decreased, which might suggest that the impurities were removed. Moreover, Dcomplex peak containing two peaks for as-grown CZT:In consisted of Cd vacancy-related (D1) and dislocation-related (D 2) defects. However, the intensity of D2 peak was very low because of the elimination of Cd inclusions after annealing. And the intensity of D1 peak increased because of the increase of Cd vacancies by evaporating for a long time.

KW - Annealing

KW - Cd vacancy

KW - CdZnTe:In

KW - Photoluminescence

KW - Te atmosphere

UR - http://www.scopus.com/inward/record.url?scp=84887039744&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2013.10.016

DO - 10.1016/j.jlumin.2013.10.016

M3 - 文章

AN - SCOPUS:84887039744

SN - 0022-2313

VL - 146

SP - 382

EP - 386

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing

Abstract

Keywords

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