TY - JOUR
T1 - Photoconductive gain under low-flux X-ray irradiation in 4HCB organic single crystal detectors
AU - Zhao, Dou
AU - Liu, Xin
AU - Yu, Jingyi
AU - Xu, Meng
AU - Zhang, Binbin
AU - Xu, Yadong
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - A photoconductive gain (up to 400%) is observed in a 4-hydroxycyanobenzene (4HCB, C7H5NO) bulk organic semiconducting detector, resulting in a high sensitivity of 38.8 μC Gyair-1 s-1 cm-2 under 50 kVp X-ray beam irradiation. The gain variation tendency as the function of both the applied bias voltage and the incident X-ray dose rate is revealed. A rising stage at the gain versus dose rate curve is observed at the low-flux range of X-ray irradiation, attributed to the trap-filling process. A deep-trapping dependent model is proposed, in which the hole injection assisted by trapped electrons is responsible for the gain.
AB - A photoconductive gain (up to 400%) is observed in a 4-hydroxycyanobenzene (4HCB, C7H5NO) bulk organic semiconducting detector, resulting in a high sensitivity of 38.8 μC Gyair-1 s-1 cm-2 under 50 kVp X-ray beam irradiation. The gain variation tendency as the function of both the applied bias voltage and the incident X-ray dose rate is revealed. A rising stage at the gain versus dose rate curve is observed at the low-flux range of X-ray irradiation, attributed to the trap-filling process. A deep-trapping dependent model is proposed, in which the hole injection assisted by trapped electrons is responsible for the gain.
UR - http://www.scopus.com/inward/record.url?scp=85091395566&partnerID=8YFLogxK
U2 - 10.35848/1882-0786/ab9adb
DO - 10.35848/1882-0786/ab9adb
M3 - 文章
AN - SCOPUS:85091395566
SN - 1882-0778
VL - 13
JO - Applied Physics Express
JF - Applied Physics Express
IS - 7
M1 - 071004
ER -