Oxidation behavior of Ti3SiC2 at high temperature in air

Shibo Li; Laifei Cheng; Litong Zhang

doi:10.1016/S0921-5093(02)00210-1

Oxidation behavior of Ti₃SiC₂ at high temperature in air

Shibo Li, Laifei Cheng, Litong Zhang

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

The oxidation behavior of ternary compound Ti₃SiC₂ is investigated in the temperature range of 1000-1500 °C for up to 20 h exposure. The scales formed on the Ti₃SiC₂ matrix were duplex, consisting of an outer layer and an inner layer over the temperature ranges. The outer layer was pure TiO₂ (rutile), and the inner layer consisted of SiO₂ and TiO₂. At the temperature 1300 °C and below, the oxidation kinetics of Ti₃SiC₂ followed the parabolic law. When the temperature rose to 1400 °C, the oxidation behavior followed the parabolic-linear law. The activation energy was calculated to be 325 kJ^-1 over the temperature range of 1000-1400 °C. A number of pores existing in the boundary of the outer layer and the inner layer provide the cannel for oxygen diffusion. The effect of pores and impurities on oxidation behavior was analyzed, and the morphology of oxidation products was observed through scanning electron microscope.

Original language	English
Pages (from-to)	112-120
Number of pages	9
Journal	Materials Science and Engineering: A
Volume	341
Issue number	1-2
DOIs	https://doi.org/10.1016/S0921-5093(02)00210-1
State	Published - 20 Jan 2003

Keywords

High temperature
Oxidation behavior
Oxidation scales
Oxide morphology
TiSiC

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10.1016/S0921-5093(02)00210-1

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title = "Oxidation behavior of Ti3SiC2 at high temperature in air",

abstract = "The oxidation behavior of ternary compound Ti3SiC2 is investigated in the temperature range of 1000-1500 °C for up to 20 h exposure. The scales formed on the Ti3SiC2 matrix were duplex, consisting of an outer layer and an inner layer over the temperature ranges. The outer layer was pure TiO2 (rutile), and the inner layer consisted of SiO2 and TiO2. At the temperature 1300 °C and below, the oxidation kinetics of Ti3SiC2 followed the parabolic law. When the temperature rose to 1400 °C, the oxidation behavior followed the parabolic-linear law. The activation energy was calculated to be 325 kJ-1 over the temperature range of 1000-1400 °C. A number of pores existing in the boundary of the outer layer and the inner layer provide the cannel for oxygen diffusion. The effect of pores and impurities on oxidation behavior was analyzed, and the morphology of oxidation products was observed through scanning electron microscope.",

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TY - JOUR

T1 - Oxidation behavior of Ti3SiC2 at high temperature in air

AU - Li, Shibo

AU - Cheng, Laifei

AU - Zhang, Litong

PY - 2003/1/20

Y1 - 2003/1/20

N2 - The oxidation behavior of ternary compound Ti3SiC2 is investigated in the temperature range of 1000-1500 °C for up to 20 h exposure. The scales formed on the Ti3SiC2 matrix were duplex, consisting of an outer layer and an inner layer over the temperature ranges. The outer layer was pure TiO2 (rutile), and the inner layer consisted of SiO2 and TiO2. At the temperature 1300 °C and below, the oxidation kinetics of Ti3SiC2 followed the parabolic law. When the temperature rose to 1400 °C, the oxidation behavior followed the parabolic-linear law. The activation energy was calculated to be 325 kJ-1 over the temperature range of 1000-1400 °C. A number of pores existing in the boundary of the outer layer and the inner layer provide the cannel for oxygen diffusion. The effect of pores and impurities on oxidation behavior was analyzed, and the morphology of oxidation products was observed through scanning electron microscope.

AB - The oxidation behavior of ternary compound Ti3SiC2 is investigated in the temperature range of 1000-1500 °C for up to 20 h exposure. The scales formed on the Ti3SiC2 matrix were duplex, consisting of an outer layer and an inner layer over the temperature ranges. The outer layer was pure TiO2 (rutile), and the inner layer consisted of SiO2 and TiO2. At the temperature 1300 °C and below, the oxidation kinetics of Ti3SiC2 followed the parabolic law. When the temperature rose to 1400 °C, the oxidation behavior followed the parabolic-linear law. The activation energy was calculated to be 325 kJ-1 over the temperature range of 1000-1400 °C. A number of pores existing in the boundary of the outer layer and the inner layer provide the cannel for oxygen diffusion. The effect of pores and impurities on oxidation behavior was analyzed, and the morphology of oxidation products was observed through scanning electron microscope.

KW - High temperature

KW - Oxidation behavior

KW - Oxidation scales

KW - Oxide morphology

KW - TiSiC

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U2 - 10.1016/S0921-5093(02)00210-1

DO - 10.1016/S0921-5093(02)00210-1

M3 - 文章

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SN - 0921-5093

VL - 341

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EP - 120

JO - Materials Science and Engineering: A

JF - Materials Science and Engineering: A

IS - 1-2

ER -

Oxidation behavior of Ti₃SiC₂ at high temperature in air

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Keywords

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