Optical and electrical properties of vanadium-doped ZnTe crystals grown by the temperature gradient solution method

Bao Xiao; Mengqin Zhu; Binbin Zhang; Jiangpeng Dong; Leilei Ji; Hui Yu; Xiaoyan Sun; Wanqi Jie; Yadong Xu

doi:10.1364/OME.8.000431

Optical and electrical properties of vanadium-doped ZnTe crystals grown by the temperature gradient solution method

Bao Xiao, Mengqin Zhu, Binbin Zhang, Jiangpeng Dong, Leilei Ji, Hui Yu, Xiaoyan Sun, Wanqi Jie, Yadong Xu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Vanadium-doped ZnTe (ZnTe:V) crystals 30 mm in diameter and 45 mm in length were grown by the temperature gradient solution growth method. The band gap of as-grown ZnTe:V crystals was estimated to be about 2.22 eV. Infrared spectra exhibit a mean transmittance of 50%-60% in the wavenumber range from 500 cm^-1 to 4000 cm^-1. Compared with the intrinsic ZnTe crystal, the resistivity of ZnTe:V is increased 6-7 orders of magnitude up to 10⁹ Ω·cm and the carrier concentration reduced from 10¹⁴ to 10⁸ cm^-3. Accordingly, the THz detection sensitivity is also enhanced by 20%-30%. The improvements on the optical and electrical properties were attributed to the compensation of Zn vacancies by the vanadium element.

Original language	English
Pages (from-to)	431-439
Number of pages	9
Journal	Optical Materials Express
Volume	8
Issue number	2
DOIs	https://doi.org/10.1364/OME.8.000431
State	Published - 1 Feb 2018

Access to Document

10.1364/OME.8.000431

Cite this

@article{8a9440dc9ca94442b9d231a5605a1c6c,

title = "Optical and electrical properties of vanadium-doped ZnTe crystals grown by the temperature gradient solution method",

abstract = "Vanadium-doped ZnTe (ZnTe:V) crystals 30 mm in diameter and 45 mm in length were grown by the temperature gradient solution growth method. The band gap of as-grown ZnTe:V crystals was estimated to be about 2.22 eV. Infrared spectra exhibit a mean transmittance of 50%-60% in the wavenumber range from 500 cm-1 to 4000 cm-1. Compared with the intrinsic ZnTe crystal, the resistivity of ZnTe:V is increased 6-7 orders of magnitude up to 109 Ω·cm and the carrier concentration reduced from 1014 to 108 cm-3. Accordingly, the THz detection sensitivity is also enhanced by 20%-30%. The improvements on the optical and electrical properties were attributed to the compensation of Zn vacancies by the vanadium element.",

author = "Bao Xiao and Mengqin Zhu and Binbin Zhang and Jiangpeng Dong and Leilei Ji and Hui Yu and Xiaoyan Sun and Wanqi Jie and Yadong Xu",

note = "Publisher Copyright: {\textcopyright} 2018 Optical Society of America.",

year = "2018",

month = feb,

day = "1",

doi = "10.1364/OME.8.000431",

language = "英语",

volume = "8",

pages = "431--439",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "Optica Publishing Group (formerly OSA)",

number = "2",

}

TY - JOUR

T1 - Optical and electrical properties of vanadium-doped ZnTe crystals grown by the temperature gradient solution method

AU - Xiao, Bao

AU - Zhu, Mengqin

AU - Zhang, Binbin

AU - Dong, Jiangpeng

AU - Ji, Leilei

AU - Yu, Hui

AU - Sun, Xiaoyan

AU - Jie, Wanqi

AU - Xu, Yadong

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Vanadium-doped ZnTe (ZnTe:V) crystals 30 mm in diameter and 45 mm in length were grown by the temperature gradient solution growth method. The band gap of as-grown ZnTe:V crystals was estimated to be about 2.22 eV. Infrared spectra exhibit a mean transmittance of 50%-60% in the wavenumber range from 500 cm-1 to 4000 cm-1. Compared with the intrinsic ZnTe crystal, the resistivity of ZnTe:V is increased 6-7 orders of magnitude up to 109 Ω·cm and the carrier concentration reduced from 1014 to 108 cm-3. Accordingly, the THz detection sensitivity is also enhanced by 20%-30%. The improvements on the optical and electrical properties were attributed to the compensation of Zn vacancies by the vanadium element.

AB - Vanadium-doped ZnTe (ZnTe:V) crystals 30 mm in diameter and 45 mm in length were grown by the temperature gradient solution growth method. The band gap of as-grown ZnTe:V crystals was estimated to be about 2.22 eV. Infrared spectra exhibit a mean transmittance of 50%-60% in the wavenumber range from 500 cm-1 to 4000 cm-1. Compared with the intrinsic ZnTe crystal, the resistivity of ZnTe:V is increased 6-7 orders of magnitude up to 109 Ω·cm and the carrier concentration reduced from 1014 to 108 cm-3. Accordingly, the THz detection sensitivity is also enhanced by 20%-30%. The improvements on the optical and electrical properties were attributed to the compensation of Zn vacancies by the vanadium element.

UR - http://www.scopus.com/inward/record.url?scp=85041034078&partnerID=8YFLogxK

U2 - 10.1364/OME.8.000431

DO - 10.1364/OME.8.000431

M3 - 文章

AN - SCOPUS:85041034078

SN - 2159-3930

VL - 8

SP - 431

EP - 439

JO - Optical Materials Express

JF - Optical Materials Express

IS - 2

ER -

Optical and electrical properties of vanadium-doped ZnTe crystals grown by the temperature gradient solution method

Abstract

Access to Document

Other files and links

Fingerprint

Cite this