Abstract
Vanadium-doped ZnTe (ZnTe:V) crystals 30 mm in diameter and 45 mm in length were grown by the temperature gradient solution growth method. The band gap of as-grown ZnTe:V crystals was estimated to be about 2.22 eV. Infrared spectra exhibit a mean transmittance of 50%-60% in the wavenumber range from 500 cm-1 to 4000 cm-1. Compared with the intrinsic ZnTe crystal, the resistivity of ZnTe:V is increased 6-7 orders of magnitude up to 109 Ω·cm and the carrier concentration reduced from 1014 to 108 cm-3. Accordingly, the THz detection sensitivity is also enhanced by 20%-30%. The improvements on the optical and electrical properties were attributed to the compensation of Zn vacancies by the vanadium element.
Original language | English |
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Pages (from-to) | 431-439 |
Number of pages | 9 |
Journal | Optical Materials Express |
Volume | 8 |
Issue number | 2 |
DOIs | |
State | Published - 1 Feb 2018 |