Optical and electrical properties of vanadium-doped ZnTe crystals grown by the temperature gradient solution method

Bao Xiao, Mengqin Zhu, Binbin Zhang, Jiangpeng Dong, Leilei Ji, Hui Yu, Xiaoyan Sun, Wanqi Jie, Yadong Xu

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Vanadium-doped ZnTe (ZnTe:V) crystals 30 mm in diameter and 45 mm in length were grown by the temperature gradient solution growth method. The band gap of as-grown ZnTe:V crystals was estimated to be about 2.22 eV. Infrared spectra exhibit a mean transmittance of 50%-60% in the wavenumber range from 500 cm-1 to 4000 cm-1. Compared with the intrinsic ZnTe crystal, the resistivity of ZnTe:V is increased 6-7 orders of magnitude up to 109 Ω·cm and the carrier concentration reduced from 1014 to 108 cm-3. Accordingly, the THz detection sensitivity is also enhanced by 20%-30%. The improvements on the optical and electrical properties were attributed to the compensation of Zn vacancies by the vanadium element.

Original languageEnglish
Pages (from-to)431-439
Number of pages9
JournalOptical Materials Express
Volume8
Issue number2
DOIs
StatePublished - 1 Feb 2018

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