One-step fast deposition of thick epitaxial CdZnTe film on (001)GaAs by close-spaced sublimation

Thick epitaxial CdZnTe film has been successfully deposited on (001)GaAs substrate through a simple one-step process by close-spaced sublimation with a deposition rate of up to 1 μm min ^-1. Well-defined epitaxial features of the film are proved by the plan view SEM, XRD -2 and scan, and the cross-sectional SEM and HRTEM analysis. A novel epitaxy mode has been discovered. The film is polycrystalline at the early stage and develops into an epitaxial layer as the deposition proceeds. The polycrystalline to single crystalline transition is completed through the lateral overgrowth and the self-organization of the layer-structured grains.