Abstract
Te precipitates in CdZnTe (CZT) crystals grown by the traveling heater method (THM) are investigated using high-resolution transmission electron microscopy (HRTEM). The results show that in THM-grown CZT crystals, Te precipitates are less than 10 nm in size—much smaller than those in Bridgman-grown CZT. They have hexagonal structure and form a coherent interface with zinc blend structure CZT matrix in the orientation relationship [112]M// [0001]P and (111)M// (1100)P. A ledge growth interface with the preferred orientation along the [111]M and [110]M was found near Te precipitates. The growth and nucleation mechanism of Te precipitates are also discussed.
Original language | English |
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Article number | 26 |
Journal | Crystals |
Volume | 8 |
Issue number | 1 |
DOIs | |
State | Published - 10 Jan 2018 |
Keywords
- CdZnTe
- Defects in semiconductors
- Interface structure
- Precipitation
- Transmission electron microscopy (TEM)
- Traveling heater method