NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source

Sreyash Sarkar; Ahmed A. Elsayed; Elyes Nefzaoui; Jeremie Drevillon; Philippe Basset; Frederic Marty; Momen Anwar; Yiting Yu; Jiancun Zhao; Xichen Yuan; Zhongzhu Liang; Diaa Khalil; Yasser M. Sabry; Tarik Bourouina

doi:10.1109/MEMSYS.2019.8870641

NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source

Sreyash Sarkar, Ahmed A. Elsayed, Elyes Nefzaoui, Jeremie Drevillon, Philippe Basset, Frederic Marty, Momen Anwar, Yiting Yu, Jiancun Zhao, Xichen Yuan, Zhongzhu Liang, Diaa Khalil, Yasser M. Sabry, Tarik Bourouina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

14 Scopus citations

Abstract

We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.

Original language	English
Title of host publication	2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	860-862
Number of pages	3
ISBN (Electronic)	9781728116105
DOIs	https://doi.org/10.1109/MEMSYS.2019.8870641
State	Published - Jan 2019
Externally published	Yes
Event	32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019 - Seoul, Korea, Republic of Duration: 27 Jan 2019 → 31 Jan 2019

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume	2019-January
ISSN (Print)	1084-6999

Conference

Conference	32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019
Country/Territory	Korea, Republic of
City	Seoul
Period	27/01/19 → 31/01/19

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10.1109/MEMSYS.2019.8870641

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Sarkar, S., Elsayed, A. A., Nefzaoui, E., Drevillon, J., Basset, P., Marty, F., Anwar, M., Yu, Y., Zhao, J., Yuan, X., Liang, Z., Khalil, D., Sabry, Y. M., & Bourouina, T. (2019). NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. In 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019 (pp. 860-862). Article 8870641 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2019-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2019.8870641

Sarkar, Sreyash ; Elsayed, Ahmed A. ; Nefzaoui, Elyes et al. / NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 860-862 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

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title = "NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source",

abstract = "We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.",

author = "Sreyash Sarkar and Elsayed, {Ahmed A.} and Elyes Nefzaoui and Jeremie Drevillon and Philippe Basset and Frederic Marty and Momen Anwar and Yiting Yu and Jiancun Zhao and Xichen Yuan and Zhongzhu Liang and Diaa Khalil and Sabry, {Yasser M.} and Tarik Bourouina",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019 ; Conference date: 27-01-2019 Through 31-01-2019",

year = "2019",

month = jan,

doi = "10.1109/MEMSYS.2019.8870641",

language = "英语",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "860--862",

booktitle = "2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019",

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Sarkar, S, Elsayed, AA, Nefzaoui, E, Drevillon, J, Basset, P, Marty, F, Anwar, M, Yu, Y, Zhao, J, Yuan, X, Liang, Z, Khalil, D, Sabry, YM & Bourouina, T 2019, NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. in 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019., 8870641, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), vol. 2019-January, Institute of Electrical and Electronics Engineers Inc., pp. 860-862, 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019, Seoul, Korea, Republic of, 27/01/19. https://doi.org/10.1109/MEMSYS.2019.8870641

NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. / Sarkar, Sreyash; Elsayed, Ahmed A.; Nefzaoui, Elyes et al.
2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 860-862 8870641 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2019-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Sarkar, Sreyash

AU - Elsayed, Ahmed A.

AU - Nefzaoui, Elyes

AU - Drevillon, Jeremie

AU - Basset, Philippe

AU - Marty, Frederic

AU - Anwar, Momen

AU - Yu, Yiting

AU - Zhao, Jiancun

AU - Yuan, Xichen

AU - Liang, Zhongzhu

AU - Khalil, Diaa

AU - Sabry, Yasser M.

AU - Bourouina, Tarik

PY - 2019/1

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N2 - We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.

AB - We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.

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T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

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BT - 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019

Y2 - 27 January 2019 through 31 January 2019

ER -

Sarkar S, Elsayed AA, Nefzaoui E, Drevillon J, Basset P, Marty F et al. NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. In 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 860-862. 8870641. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2019.8870641

NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source

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