NiO/SiC nanocomposite prepared by atomic layer deposition used as a novel electrocatalyst for nonenzymatic glucose sensing

Peng Yang, Xili Tong, Guizhen Wang, Zhe Gao, Xiangyun Guo, Yong Qin

Research output: Contribution to journalArticlepeer-review

81 Scopus citations

Abstract

NiO nanoparticles are deposited onto SiC particles by atomic layer deposition (ALD). The structure of the NiO/SiC hybrid material is investigated by inductively coupled plasma atomic emission spectrometry (ICP-AES), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The size of the NiO nanoparticles is flexible and can be adjusted by altering the cycle number of the NiO ALD. Electrochemical measurements illustrate that NiO/SiC prepared with 600 cycles for NiO ALD exhibits the highest glucose sensing ability in alkaline electrolytes with a low detection limit of 0.32 μM (S/N = 3), high sensitivity of 2.037 mA mM-1 cm-2, a linear detection range from approximately 4 μM to 7.5 mM, and good stability. Its sensitivity is about 6 times of that for commercial NiO nanoparticles and NiO/SiC nanocomposites prepared by a traditional incipient wetness impregnation method. It is revealed that the superior electrochemical ability of ALD NiO/SiC is ascribed to the strong interaction between NiO and the SiC substrate and the high dispersity of NiO nanoparticles on the SiC surface. These results suggest that ALD is an effective way to deposit NiO on SiC for nonenzymatic glucose sensing.

Original languageEnglish
Pages (from-to)4772-4777
Number of pages6
JournalACS Applied Materials and Interfaces
Volume7
Issue number8
DOIs
StatePublished - 4 Mar 2015
Externally publishedYes

Keywords

  • atomic layer deposition
  • electrocatalysis
  • glucose sensor
  • NiO nanoparticles
  • nonenzymatic
  • silicon carbide

Fingerprint

Dive into the research topics of 'NiO/SiC nanocomposite prepared by atomic layer deposition used as a novel electrocatalyst for nonenzymatic glucose sensing'. Together they form a unique fingerprint.

Cite this