New precursor for metal organic chemical vapor deposition of iridium thin films

Xin Yan, Qiuyu Zhang, Xiaodong Fan

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A new precursor Ir(thd)3 was synthesized from iridium salts solution and Hthd. The structure of Ir(thd)3 was characterized by element analysis, infrared spectroscopy, and HNMR spectroscopy. The results of TG showed that the precursor was completely volatile near 290 °C. The Iridium films were prepared from the synthesized precursor by MOCVD. The structure and morphology of iridium films were studied by XRD and AFM. The results showed that the iridium films were successfully prepared and the surface of films was continuous and compact.

Original languageEnglish
Pages (from-to)1129-1131
Number of pages3
JournalXiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume35
Issue number7
StatePublished - Jul 2006

Keywords

  • Iridium film
  • MOCVD
  • Precursor

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