TY - GEN
T1 - Nanostructure Vanadium-doped Zinc Oxide Film Sensor Endowed with Enhanced Piezoelectric Response ∗∗Resrach supported by the National Natural Science Foundation of China (Grant No. 51775446).
AU - Gao, Wei
AU - Zhang, Yu
AU - Ma, Binghe
AU - Luo, Jian
AU - Deng, Jinjun
AU - Yuan, Weizheng
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/4/25
Y1 - 2021/4/25
N2 - We present a performance-enhanced piezoelectric sensor utilizing nanostructure Vanadium-doped zinc oxide (ZnO) thin film aiming at sensitively measuring underwater sound signals. The sensor is fabricated by MEMS technology using a 6-mask ZnO-on-SOI process platform. Individual sensor with a low foot-print of 2 mmx2mm could be easily assembled working as a hydrophone. Sensing element based on the V-doped ZnO film is endowed improved piezoelectricity with the piezoelectric constant of 110.3 pm/V. Demonstrations in a plane-wave tube test system confirm that the output voltage of the V-doped ZnO film sensor obviously increases by an order of magnitude compared with the pure ZnO film sensor with same dimensions, showing great potential in the field of underwater acoustic detection.
AB - We present a performance-enhanced piezoelectric sensor utilizing nanostructure Vanadium-doped zinc oxide (ZnO) thin film aiming at sensitively measuring underwater sound signals. The sensor is fabricated by MEMS technology using a 6-mask ZnO-on-SOI process platform. Individual sensor with a low foot-print of 2 mmx2mm could be easily assembled working as a hydrophone. Sensing element based on the V-doped ZnO film is endowed improved piezoelectricity with the piezoelectric constant of 110.3 pm/V. Demonstrations in a plane-wave tube test system confirm that the output voltage of the V-doped ZnO film sensor obviously increases by an order of magnitude compared with the pure ZnO film sensor with same dimensions, showing great potential in the field of underwater acoustic detection.
UR - http://www.scopus.com/inward/record.url?scp=85113310201&partnerID=8YFLogxK
U2 - 10.1109/NEMS51815.2021.9451495
DO - 10.1109/NEMS51815.2021.9451495
M3 - 会议稿件
AN - SCOPUS:85113310201
T3 - Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
SP - 1415
EP - 1418
BT - Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
Y2 - 25 April 2021 through 29 April 2021
ER -