TY - GEN
T1 - Nanometer bulk-driven applications MOSFET model analysis
AU - Wang, Shaoxi
PY - 2010
Y1 - 2010
N2 - Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform correctly and accurately for the bulk-driven applications in the advanced technologies. In this paper, three most widely used MOSFET models, including BSIM, EKV, and PSP, have been extracted for the modern technologies and used in the simulation of bulk-driven applications. Measurement data of fabricated devices are compared with simulation results from distinct models. Several critical MOSFET parameters have been chosen to compare and analyze MOSFET characteristics. The experimental results demonstrate the advantages of the bulk-driven technique compared with the gate-driven scheme. Finally, the performance of distinct MOSFET models is summarized in order to provide analog circuit designers with practical directives.
AB - Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform correctly and accurately for the bulk-driven applications in the advanced technologies. In this paper, three most widely used MOSFET models, including BSIM, EKV, and PSP, have been extracted for the modern technologies and used in the simulation of bulk-driven applications. Measurement data of fabricated devices are compared with simulation results from distinct models. Several critical MOSFET parameters have been chosen to compare and analyze MOSFET characteristics. The experimental results demonstrate the advantages of the bulk-driven technique compared with the gate-driven scheme. Finally, the performance of distinct MOSFET models is summarized in order to provide analog circuit designers with practical directives.
KW - Bulk-driven
KW - Model
KW - MOSFET
KW - Nanometer
UR - http://www.scopus.com/inward/record.url?scp=77955929700&partnerID=8YFLogxK
U2 - 10.1109/ICCDA.2010.5541217
DO - 10.1109/ICCDA.2010.5541217
M3 - 会议稿件
AN - SCOPUS:77955929700
SN - 9781424471638
T3 - 2010 International Conference on Computer Design and Applications, ICCDA 2010
SP - V4197-V4200
BT - 2010 International Conference on Computer Design and Applications, ICCDA 2010
T2 - 2010 International Conference on Computer Design and Applications, ICCDA 2010
Y2 - 25 June 2010 through 27 June 2010
ER -