TY - JOUR
T1 - Multifunctional sodium phytate as buried interface Passivator for high efficiency and stable planar perovskite solar cells
AU - Su, Haijun
AU - Liu, Congcong
AU - Fan, Huichao
AU - Guo, Yinuo
AU - Guo, Min
AU - Zhang, Zhuo
N1 - Publisher Copyright:
© 2024 Elsevier B.V.
PY - 2024/11/15
Y1 - 2024/11/15
N2 - The buried interface defects of SnO2 electron transport layer (ETL)/perovskite limit the enhancement of photoelectric conversion efficiency (PCE) and stability of perovskite solar cells (PSCs) based on SnO2. Here, sodium phytate (SP) is employed as a complex molecule for passivating the buried interface defects of SnO2/perovskite, thus achieving comprehensive improvement of SnO2 ETL, perovskite film, and interface heterojunction. It is found that the six electron-donating groups (PO42-) in SP can provide multiple chelating sites to bind closely with uncoordinated Sn2+ at the buried SnO2/perovskite interface, thereby enhancing the quality of SnO2 ETL and passivating the buried interface defects. SP can raise the surface energy of SnO2 ETL, inhibit perovskite nucleation, and improve the average grain size of perovskite film from 530 nm to 665 nm. Thus, the efficiency of PSC made with SP-SnO2 is dramatically enhanced from 19.55 % to 22.29 %, which is 14.0 % higher than that of the PSC made with SnO2 (19.55 %). The unencapsulated devices made with SP-SnO2 show excellent humidity stability, maintaining 84 % of their initial efficiency after 1000 h in an air environment with a relative humidity (RH) of 60 %, while SnO2-based PSCs remain only 58 %. The complexation strategy affords a universal method to passivate buried interface defects, revealing broad application prospects in efficient and stable PSCs.
AB - The buried interface defects of SnO2 electron transport layer (ETL)/perovskite limit the enhancement of photoelectric conversion efficiency (PCE) and stability of perovskite solar cells (PSCs) based on SnO2. Here, sodium phytate (SP) is employed as a complex molecule for passivating the buried interface defects of SnO2/perovskite, thus achieving comprehensive improvement of SnO2 ETL, perovskite film, and interface heterojunction. It is found that the six electron-donating groups (PO42-) in SP can provide multiple chelating sites to bind closely with uncoordinated Sn2+ at the buried SnO2/perovskite interface, thereby enhancing the quality of SnO2 ETL and passivating the buried interface defects. SP can raise the surface energy of SnO2 ETL, inhibit perovskite nucleation, and improve the average grain size of perovskite film from 530 nm to 665 nm. Thus, the efficiency of PSC made with SP-SnO2 is dramatically enhanced from 19.55 % to 22.29 %, which is 14.0 % higher than that of the PSC made with SnO2 (19.55 %). The unencapsulated devices made with SP-SnO2 show excellent humidity stability, maintaining 84 % of their initial efficiency after 1000 h in an air environment with a relative humidity (RH) of 60 %, while SnO2-based PSCs remain only 58 %. The complexation strategy affords a universal method to passivate buried interface defects, revealing broad application prospects in efficient and stable PSCs.
KW - Buried interface defects
KW - Humidity stability
KW - Perovskite solar cells
KW - Sodium phytate
UR - http://www.scopus.com/inward/record.url?scp=85207868251&partnerID=8YFLogxK
U2 - 10.1016/j.cej.2024.157212
DO - 10.1016/j.cej.2024.157212
M3 - 文章
AN - SCOPUS:85207868251
SN - 1385-8947
VL - 500
JO - Chemical Engineering Journal
JF - Chemical Engineering Journal
M1 - 157212
ER -