Morphology and crystalline phase characteristics of α-GST films irradiated by a picosecond laser

J. J. Zhao; F. R. Liu; X. X. Han; N. Bai; Y. H. Wan; X. Lin; F. Liu

doi:10.1016/j.apsusc.2013.10.126

Morphology and crystalline phase characteristics of α-GST films irradiated by a picosecond laser

J. J. Zhao, F. R. Liu, X. X. Han, N. Bai, Y. H. Wan, X. Lin, F. Liu

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The morphology and crystalline phase characteristics of amorphous Ge ₂ Sb ₂ Te ₅ films irradiated by a picosecond laser were investigated by 3D surface profiler, atomic force microscopy (AFM) and transmission electron microscopy (TEM) integrated with selected area electron diffraction (SAED). The laser irradiated spot was divided into strong ablation area, gentle ablation area, melting area and irradiation area. By theoretical calculation, the ablation and melting thresholds were determined to be 173.05 mJ cm ^-2 and 99.19 mJ cm ^-2 respectively. Meantime, the local fine morphologies of the ablation and melting areas were shown and analyzed. We also studied the irradiation area which was made up by the non-phase-change area and phase-change area. In the phase-change area, crystalline phase was determined to be face-centered cubic structure and crystalline phase characteristics for films with different thicknesses were discussed.

Original language	English
Pages (from-to)	160-166
Number of pages	7
Journal	Applied Surface Science
Volume	289
DOIs	https://doi.org/10.1016/j.apsusc.2013.10.126
State	Published - 15 Jan 2014

Keywords

Morphology
Phase change
Picosecond laser

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10.1016/j.apsusc.2013.10.126

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title = "Morphology and crystalline phase characteristics of α-GST films irradiated by a picosecond laser",

abstract = " The morphology and crystalline phase characteristics of amorphous Ge 2 Sb 2 Te 5 films irradiated by a picosecond laser were investigated by 3D surface profiler, atomic force microscopy (AFM) and transmission electron microscopy (TEM) integrated with selected area electron diffraction (SAED). The laser irradiated spot was divided into strong ablation area, gentle ablation area, melting area and irradiation area. By theoretical calculation, the ablation and melting thresholds were determined to be 173.05 mJ cm -2 and 99.19 mJ cm -2 respectively. Meantime, the local fine morphologies of the ablation and melting areas were shown and analyzed. We also studied the irradiation area which was made up by the non-phase-change area and phase-change area. In the phase-change area, crystalline phase was determined to be face-centered cubic structure and crystalline phase characteristics for films with different thicknesses were discussed.",

keywords = "Morphology, Phase change, Picosecond laser",

author = "Zhao, {J. J.} and Liu, {F. R.} and Han, {X. X.} and N. Bai and Wan, {Y. H.} and X. Lin and F. Liu",

year = "2014",

month = jan,

day = "15",

doi = "10.1016/j.apsusc.2013.10.126",

language = "英语",

volume = "289",

pages = "160--166",

journal = "Applied Surface Science",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Morphology and crystalline phase characteristics of α-GST films irradiated by a picosecond laser

AU - Zhao, J. J.

AU - Liu, F. R.

AU - Han, X. X.

AU - Bai, N.

AU - Wan, Y. H.

AU - Lin, X.

AU - Liu, F.

PY - 2014/1/15

Y1 - 2014/1/15

N2 - The morphology and crystalline phase characteristics of amorphous Ge 2 Sb 2 Te 5 films irradiated by a picosecond laser were investigated by 3D surface profiler, atomic force microscopy (AFM) and transmission electron microscopy (TEM) integrated with selected area electron diffraction (SAED). The laser irradiated spot was divided into strong ablation area, gentle ablation area, melting area and irradiation area. By theoretical calculation, the ablation and melting thresholds were determined to be 173.05 mJ cm -2 and 99.19 mJ cm -2 respectively. Meantime, the local fine morphologies of the ablation and melting areas were shown and analyzed. We also studied the irradiation area which was made up by the non-phase-change area and phase-change area. In the phase-change area, crystalline phase was determined to be face-centered cubic structure and crystalline phase characteristics for films with different thicknesses were discussed.

AB - The morphology and crystalline phase characteristics of amorphous Ge 2 Sb 2 Te 5 films irradiated by a picosecond laser were investigated by 3D surface profiler, atomic force microscopy (AFM) and transmission electron microscopy (TEM) integrated with selected area electron diffraction (SAED). The laser irradiated spot was divided into strong ablation area, gentle ablation area, melting area and irradiation area. By theoretical calculation, the ablation and melting thresholds were determined to be 173.05 mJ cm -2 and 99.19 mJ cm -2 respectively. Meantime, the local fine morphologies of the ablation and melting areas were shown and analyzed. We also studied the irradiation area which was made up by the non-phase-change area and phase-change area. In the phase-change area, crystalline phase was determined to be face-centered cubic structure and crystalline phase characteristics for films with different thicknesses were discussed.

KW - Morphology

KW - Phase change

KW - Picosecond laser

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U2 - 10.1016/j.apsusc.2013.10.126

DO - 10.1016/j.apsusc.2013.10.126

M3 - 文章

AN - SCOPUS:84890571221

SN - 0169-4332

VL - 289

SP - 160

EP - 166

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Morphology and crystalline phase characteristics of α-GST films irradiated by a picosecond laser

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Keywords

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