MoO3–MoS2 vertical heterostructures synthesized via one-step CVD process for optoelectronics

Yuxi Guo; Lixing Kang; Pin Song; Qingsheng Zeng; Bijun Tang; Jiefu Yang; Yao Wu; Dan Tian; Manzhang Xu; Wu Zhao; Xiaofei Qi; Zhiyong Zhang; Zheng Liu

doi:10.1088/2053-1583/abfede

MoO₃–MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics

Yuxi Guo, Lixing Kang, Pin Song, Qingsheng Zeng, Bijun Tang, Jiefu Yang, Yao Wu, Dan Tian, Manzhang Xu, Wu Zhao, Xiaofei Qi, Zhiyong Zhang, Zheng Liu

Institute of Flexible Electronics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO₃–MoS₂ are successfully synthesized on SiO₂/Si substrates via one-step chemical vapor deposition process. The vertical MoO₃–MoS₂ heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO₃–MoS₂ heterostructures presents responsivity of 5.41 × 10³ A W⁻¹, detectivity of 0.89 × 10¹⁰ Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO₃–MoS₂ vertical heterostructures for electronic and optoelectronic applications.

Original language	English
Article number	035036
Journal	2D Materials
Volume	8
Issue number	3
DOIs	https://doi.org/10.1088/2053-1583/abfede
State	Published - Jul 2021

Keywords

2D materials
Chemical vapor deposition
Current-rectifying
Optoelectronics
Vertical heterostructures

Access to Document

10.1088/2053-1583/abfede

Cite this

@article{be4b3d8c15994b04abd03c4f6f6c0bf0,

title = "MoO3–MoS2 vertical heterostructures synthesized via one-step CVD process for optoelectronics",

abstract = "The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO3–MoS2 heterostructures presents responsivity of 5.41 × 103 A W−1, detectivity of 0.89 × 1010 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO3–MoS2 vertical heterostructures for electronic and optoelectronic applications.",

keywords = "2D materials, Chemical vapor deposition, Current-rectifying, Optoelectronics, Vertical heterostructures",

author = "Yuxi Guo and Lixing Kang and Pin Song and Qingsheng Zeng and Bijun Tang and Jiefu Yang and Yao Wu and Dan Tian and Manzhang Xu and Wu Zhao and Xiaofei Qi and Zhiyong Zhang and Zheng Liu",

note = "Publisher Copyright: {\textcopyright} 2021 IOP Publishing Ltd",

year = "2021",

month = jul,

doi = "10.1088/2053-1583/abfede",

language = "英语",

volume = "8",

journal = "2D Materials",

issn = "2053-1583",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - MoO3–MoS2 vertical heterostructures synthesized via one-step CVD process for optoelectronics

AU - Guo, Yuxi

AU - Kang, Lixing

AU - Song, Pin

AU - Zeng, Qingsheng

AU - Tang, Bijun

AU - Yang, Jiefu

AU - Wu, Yao

AU - Tian, Dan

AU - Xu, Manzhang

AU - Zhao, Wu

AU - Qi, Xiaofei

AU - Zhang, Zhiyong

AU - Liu, Zheng

PY - 2021/7

Y1 - 2021/7

N2 - The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO3–MoS2 heterostructures presents responsivity of 5.41 × 103 A W−1, detectivity of 0.89 × 1010 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO3–MoS2 vertical heterostructures for electronic and optoelectronic applications.

AB - The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO3–MoS2 heterostructures presents responsivity of 5.41 × 103 A W−1, detectivity of 0.89 × 1010 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO3–MoS2 vertical heterostructures for electronic and optoelectronic applications.

KW - 2D materials

KW - Chemical vapor deposition

KW - Current-rectifying

KW - Optoelectronics

KW - Vertical heterostructures

UR - http://www.scopus.com/inward/record.url?scp=85106551173&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/abfede

DO - 10.1088/2053-1583/abfede

M3 - 文章

AN - SCOPUS:85106551173

SN - 2053-1583

VL - 8

JO - 2D Materials

JF - 2D Materials

IS - 3

M1 - 035036

ER -

MoO₃–MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this