TY - JOUR
T1 - Molecular Design Engineering Regulates the Ground-State Passivation Ability of Benzophenone Derivatives in Perovskite Solar Cells
AU - Jiang, Haipeng
AU - Wei, Chunyu
AU - Wang, Jin
AU - Dong, He
AU - Fu, Xinmin
AU - Zhang, Le
AU - Wang, Fengyou
AU - Fan, Lin
AU - Wei, Maobin
AU - Liu, Huilian
AU - Yang, Lili
AU - Yan, Yongsheng
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/10/2
Y1 - 2024/10/2
N2 - Intramolecular hydrogen bonding (H-bonding) involved in the excited-state proton transfer (ESPT) process results in benzophenone derivatives (BPDs) with an excellent ability to passivate defects. However, the BPDs are in a continuing dynamic transition process between the ground state and the excited state under light radiation conditions. The ground-state BPDs may lose their ability to passivate defects, resulting in an increased defect density of the perovskite. Therefore, enhancing the passivation ability of the ground-state BPDs can help to achieve the full passivation ability of their ground state to excited state. Herein, we have researched the various BPDs by density functional theory and found that intramolecular H-bonding can weaken the passivation ability of ground-state BPDs, but intramolecular H-bonding is indispensable in the ESPT process. To address the issue, we investigated the influence of electron-donor properties and dipole moments of hydroxyl (−OH), methoxy (−OCH3), and n-octyloxy (−OC8H17) groups in BPD molecules on their coordination capacity through molecular design engineering. Ultimately, 2-hydroxy-4-n-octyloxy-benzophenone (UV5) with strong electron-donor n-octyloxy (−OC8H17) and elongated carbon-chain structure was selected as an additive, which enhances the passivate defect capability in both the ground and excited states. As a result, the UV5-based champion device achieved a power conversion efficiency (PCE) of 24.46% and remained at 75% of the initial PCE with exposure to UV light. This work focuses on the defect passivation capability of ground-state BPDs for the first time and opens a new concept for applying BPDs in PSCs.
AB - Intramolecular hydrogen bonding (H-bonding) involved in the excited-state proton transfer (ESPT) process results in benzophenone derivatives (BPDs) with an excellent ability to passivate defects. However, the BPDs are in a continuing dynamic transition process between the ground state and the excited state under light radiation conditions. The ground-state BPDs may lose their ability to passivate defects, resulting in an increased defect density of the perovskite. Therefore, enhancing the passivation ability of the ground-state BPDs can help to achieve the full passivation ability of their ground state to excited state. Herein, we have researched the various BPDs by density functional theory and found that intramolecular H-bonding can weaken the passivation ability of ground-state BPDs, but intramolecular H-bonding is indispensable in the ESPT process. To address the issue, we investigated the influence of electron-donor properties and dipole moments of hydroxyl (−OH), methoxy (−OCH3), and n-octyloxy (−OC8H17) groups in BPD molecules on their coordination capacity through molecular design engineering. Ultimately, 2-hydroxy-4-n-octyloxy-benzophenone (UV5) with strong electron-donor n-octyloxy (−OC8H17) and elongated carbon-chain structure was selected as an additive, which enhances the passivate defect capability in both the ground and excited states. As a result, the UV5-based champion device achieved a power conversion efficiency (PCE) of 24.46% and remained at 75% of the initial PCE with exposure to UV light. This work focuses on the defect passivation capability of ground-state BPDs for the first time and opens a new concept for applying BPDs in PSCs.
KW - benzophenone derivatives
KW - excited-state proton transfer
KW - intramolecular hydrogen bonding
KW - perovskite solar cells
KW - ultraviolet stability
UR - http://www.scopus.com/inward/record.url?scp=85205604737&partnerID=8YFLogxK
U2 - 10.1021/acsami.4c14156
DO - 10.1021/acsami.4c14156
M3 - 文章
C2 - 39292614
AN - SCOPUS:85205604737
SN - 1944-8244
VL - 16
SP - 52583
EP - 52594
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 39
ER -