Millimeter-Wave Rectifiers Using Proprietary Schottky Diodes: Diode Modeling and Rectifier Analysis

Si Ping Gao, Wenrui Hu, Hao Zhang, Yongxin Guo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

This paper investigates millimeter-wave rectifiers based on off-the-shelf Schottky diodes. A batch of MACOM MA4E1317 diodes were first measured. The dc IV ranges from -10 to 1 V, while the biased S-parameters were measured up to 50 GHz. For the first time, MA4E1317 was modeled based on S-parameters up to 50 GHz, which gives more accurate modeling for extrinsic parameters of a diode. Preliminary intrinsic and extrinsic diode parameters were reported here. Based on the parameters, the performance of rectifiers using MA4E1317 was analyzed by the contour map method. It is found that the extrinsic parameters greatly influence the rectifier performance, proving the significance of accurate diode modeling with high-frequency measurement data.

Original languageEnglish
Title of host publication2022 Wireless Power Week, WPW 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages180-184
Number of pages5
ISBN (Electronic)9781665484459
DOIs
StatePublished - 2022
Event2022 Wireless Power Week, WPW 2022 - Bordeaux, France
Duration: 5 Jul 20228 Jul 2022

Publication series

Name2022 Wireless Power Week, WPW 2022 - Proceedings

Conference

Conference2022 Wireless Power Week, WPW 2022
Country/TerritoryFrance
CityBordeaux
Period5/07/228/07/22

Keywords

  • Diode modeling
  • measurement
  • millimeter-wave
  • proprietary diodes
  • rectifier

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