TY - JOUR
T1 - Microstructures of directionally solidified Si-TaSi2 eutectic in situ composite for field emission
AU - Cui, Chun Juan
AU - Zhang, Jun
AU - Su, Hai Jun
AU - Wang, Hong
AU - Liu, Lin
AU - Fu, Heng Zhi
PY - 2007/9
Y1 - 2007/9
N2 - The directionally solidified Si-TaSi2 eutectic in situ composite for field emission was prepared with the electron beam floating zone melting (EBFZM) technique. The microstructure characteristic of Si-TaSi2 eutectic was systematically investigated. The Si-TaSi2 eutectic in situ composite, which has high-aligned and uniformly-distributed TaSi2 fibers in the Si matrix, can be obtained when the solidification rate changes from 0.3 mm/min to 9.0 mm/min. With the increase of the solidification rate, the diameter and the inter-rod spacing of the TaSi2 fibers are decreased, while the density and the volume fraction of the fibers are increased. The solid/liquid interface is studied by the zero power method as well. When the solidification rate varies from 0.3 mm/min to 5.0 mm/min, the solid/liquid interface morphology has the following evolution processing: planar interface → shallow cell interface → cell interface → planar interface.
AB - The directionally solidified Si-TaSi2 eutectic in situ composite for field emission was prepared with the electron beam floating zone melting (EBFZM) technique. The microstructure characteristic of Si-TaSi2 eutectic was systematically investigated. The Si-TaSi2 eutectic in situ composite, which has high-aligned and uniformly-distributed TaSi2 fibers in the Si matrix, can be obtained when the solidification rate changes from 0.3 mm/min to 9.0 mm/min. With the increase of the solidification rate, the diameter and the inter-rod spacing of the TaSi2 fibers are decreased, while the density and the volume fraction of the fibers are increased. The solid/liquid interface is studied by the zero power method as well. When the solidification rate varies from 0.3 mm/min to 5.0 mm/min, the solid/liquid interface morphology has the following evolution processing: planar interface → shallow cell interface → cell interface → planar interface.
KW - Directional solidification
KW - Electron beam floating zone melting
KW - Si-TaSi eutectic in situ composite
KW - Solid/liquid interface
UR - http://www.scopus.com/inward/record.url?scp=35548958667&partnerID=8YFLogxK
M3 - 文章
AN - SCOPUS:35548958667
SN - 1000-324X
VL - 22
SP - 1019
EP - 1023
JO - Wuji Cailiao Xuebao/Journal of Inorganic Materials
JF - Wuji Cailiao Xuebao/Journal of Inorganic Materials
IS - 5
ER -