TY - JOUR
T1 - Microstructure and the dielectric properties of SiCN-Si3N 4 ceramics fabricated via LPCVD/CVI
AU - Liu, Xiaofei
AU - Zhang, Litong
AU - Liu, Yongsheng
AU - Ye, Fang
AU - Yin, Xiaowei
PY - 2014/4
Y1 - 2014/4
N2 - SiCN-Si3N4 ceramics were fabricated by infiltrating SiCN into porous Si3N4 ceramics with different flux ratio of precursor gases via low-pressure chemical vapor deposition/infiltration (LPCVD/CVI). Several methods of characterization were employed to discuss the effects of different precursor gases ratio on the microstructure and dielectric properties of fabricated SiCN-Si3N4 ceramics. The deposition product is amorphous and mainly consists of SiN, CC and SiC bonds. In SiCN-Si3N4 ceramics, free carbon disperses uniformly in the amorphous and low-conductivity SiCN, which results in suitable dielectric properties. The mean real part (ε′) and imaginary part (ε") of permittivity increase from 3.82 and 0.05 to 7.71 and 6.94, respectively. The dielectric loss (tan δ) can be controlled from 0.014 to 0.899 by changing the flux ratio of C3H6.
AB - SiCN-Si3N4 ceramics were fabricated by infiltrating SiCN into porous Si3N4 ceramics with different flux ratio of precursor gases via low-pressure chemical vapor deposition/infiltration (LPCVD/CVI). Several methods of characterization were employed to discuss the effects of different precursor gases ratio on the microstructure and dielectric properties of fabricated SiCN-Si3N4 ceramics. The deposition product is amorphous and mainly consists of SiN, CC and SiC bonds. In SiCN-Si3N4 ceramics, free carbon disperses uniformly in the amorphous and low-conductivity SiCN, which results in suitable dielectric properties. The mean real part (ε′) and imaginary part (ε") of permittivity increase from 3.82 and 0.05 to 7.71 and 6.94, respectively. The dielectric loss (tan δ) can be controlled from 0.014 to 0.899 by changing the flux ratio of C3H6.
KW - Amorphous
KW - Chemical vapor deposition/infiltration
KW - Dielectric materials/properties
KW - Silicon carbonitride
UR - http://www.scopus.com/inward/record.url?scp=84891371844&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2013.09.126
DO - 10.1016/j.ceramint.2013.09.126
M3 - 文章
AN - SCOPUS:84891371844
SN - 0272-8842
VL - 40
SP - 5097
EP - 5102
JO - Ceramics International
JF - Ceramics International
IS - 3
ER -