Microstructure and Dielectric Property of 3D BNf/Si3N4 Fabricated by CVI Process

Jianping Li; Laifei Cheng; Fang Ye; Yongsheng Liu; Xiaowei Yin; Mingxia Zhang

doi:10.1007/s11595-019-2123-x

Microstructure and Dielectric Property of 3D BN_f/Si₃N₄ Fabricated by CVI Process

Jianping Li, Laifei Cheng, Fang Ye, Yongsheng Liu, Xiaowei Yin, Mingxia Zhang

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

As potential wave-transparent materials applied at high temperatures, 3D BN_f/Si₃N₄ ceramic matrix composites were prepared by low pressure chemical vapor infiltration or deposition (LPCVI/ CVD) process from SiCl₄-NH₃-H₂-Ar gas precursor at 800 °C. The densification process, microstructure and dielectric properties of 3D BN_f/Si₃N₄ composites were investigated. The results indicated that 3D BN_f/ Si₃N₄ was successfully fabricated by LPCVI/CVD, with final open porosity of 2.37% and density of 1.89 g/ cm³. Densification kinetics of 3D BN_f/Si₃N₄ is a typical exponential pattern. The Si₃N₄ matrix was uniformly infiltrated into porous BN_f preform. The deposited Si₃N₄ matrix was amorphous by XRD analysis. Introduction of BN fiber into Si₃N₄ ceramic lowered the permittivity of Si₃N₄. The fabricated BN_f/Si₃N₄ composites possess low permittivity of 3.68 and low dielectric loss of lower than 0.01, which are independent of temperature below 400 °C. Transmission coefficient of BN_f/Si₃N₄ composite is 0.57 and keeps stable below 400 °C. BN_f/Si₃N₄ can be fabricated at low temperature and may be candidates for the microwave transparent materials.

Original language	English
Pages (from-to)	818-823
Number of pages	6
Journal	Journal Wuhan University of Technology, Materials Science Edition
Volume	34
Issue number	4
DOIs	https://doi.org/10.1007/s11595-019-2123-x
State	Published - 1 Aug 2019

Keywords

BN/SiN
dielectric property
high temperature stability
LPCVI

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@article{1708d73233e54c77b5463e9ee0bb9e3f,

title = "Microstructure and Dielectric Property of 3D BNf/Si3N4 Fabricated by CVI Process",

abstract = "As potential wave-transparent materials applied at high temperatures, 3D BNf/Si3N4 ceramic matrix composites were prepared by low pressure chemical vapor infiltration or deposition (LPCVI/ CVD) process from SiCl4-NH3-H2-Ar gas precursor at 800 °C. The densification process, microstructure and dielectric properties of 3D BNf/Si3N4 composites were investigated. The results indicated that 3D BNf/ Si3N4 was successfully fabricated by LPCVI/CVD, with final open porosity of 2.37% and density of 1.89 g/ cm3. Densification kinetics of 3D BNf/Si3N4 is a typical exponential pattern. The Si3N4 matrix was uniformly infiltrated into porous BNf preform. The deposited Si3N4 matrix was amorphous by XRD analysis. Introduction of BN fiber into Si3N4 ceramic lowered the permittivity of Si3N4. The fabricated BNf/Si3N4 composites possess low permittivity of 3.68 and low dielectric loss of lower than 0.01, which are independent of temperature below 400 °C. Transmission coefficient of BNf/Si3N4 composite is 0.57 and keeps stable below 400 °C. BNf/Si3N4 can be fabricated at low temperature and may be candidates for the microwave transparent materials.",

keywords = "BN/SiN, dielectric property, high temperature stability, LPCVI",

author = "Jianping Li and Laifei Cheng and Fang Ye and Yongsheng Liu and Xiaowei Yin and Mingxia Zhang",

note = "Publisher Copyright: {\textcopyright} 2019, Wuhan University of Technology and Springer-Verlag GmbH Germany, Part of Springer Nature.",

year = "2019",

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doi = "10.1007/s11595-019-2123-x",

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TY - JOUR

T1 - Microstructure and Dielectric Property of 3D BNf/Si3N4 Fabricated by CVI Process

AU - Li, Jianping

AU - Cheng, Laifei

AU - Ye, Fang

AU - Liu, Yongsheng

AU - Yin, Xiaowei

AU - Zhang, Mingxia

PY - 2019/8/1

Y1 - 2019/8/1

N2 - As potential wave-transparent materials applied at high temperatures, 3D BNf/Si3N4 ceramic matrix composites were prepared by low pressure chemical vapor infiltration or deposition (LPCVI/ CVD) process from SiCl4-NH3-H2-Ar gas precursor at 800 °C. The densification process, microstructure and dielectric properties of 3D BNf/Si3N4 composites were investigated. The results indicated that 3D BNf/ Si3N4 was successfully fabricated by LPCVI/CVD, with final open porosity of 2.37% and density of 1.89 g/ cm3. Densification kinetics of 3D BNf/Si3N4 is a typical exponential pattern. The Si3N4 matrix was uniformly infiltrated into porous BNf preform. The deposited Si3N4 matrix was amorphous by XRD analysis. Introduction of BN fiber into Si3N4 ceramic lowered the permittivity of Si3N4. The fabricated BNf/Si3N4 composites possess low permittivity of 3.68 and low dielectric loss of lower than 0.01, which are independent of temperature below 400 °C. Transmission coefficient of BNf/Si3N4 composite is 0.57 and keeps stable below 400 °C. BNf/Si3N4 can be fabricated at low temperature and may be candidates for the microwave transparent materials.

AB - As potential wave-transparent materials applied at high temperatures, 3D BNf/Si3N4 ceramic matrix composites were prepared by low pressure chemical vapor infiltration or deposition (LPCVI/ CVD) process from SiCl4-NH3-H2-Ar gas precursor at 800 °C. The densification process, microstructure and dielectric properties of 3D BNf/Si3N4 composites were investigated. The results indicated that 3D BNf/ Si3N4 was successfully fabricated by LPCVI/CVD, with final open porosity of 2.37% and density of 1.89 g/ cm3. Densification kinetics of 3D BNf/Si3N4 is a typical exponential pattern. The Si3N4 matrix was uniformly infiltrated into porous BNf preform. The deposited Si3N4 matrix was amorphous by XRD analysis. Introduction of BN fiber into Si3N4 ceramic lowered the permittivity of Si3N4. The fabricated BNf/Si3N4 composites possess low permittivity of 3.68 and low dielectric loss of lower than 0.01, which are independent of temperature below 400 °C. Transmission coefficient of BNf/Si3N4 composite is 0.57 and keeps stable below 400 °C. BNf/Si3N4 can be fabricated at low temperature and may be candidates for the microwave transparent materials.

KW - BN/SiN

KW - dielectric property

KW - high temperature stability

KW - LPCVI

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U2 - 10.1007/s11595-019-2123-x

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Microstructure and Dielectric Property of 3D BN_f/Si₃N₄ Fabricated by CVI Process

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