Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures

Jianping Li; Mingxi Zhao; Yongsheng Liu; Nan Chai; Fang Ye; Hailong Qin; Laifei Cheng; Litong Zhang

doi:10.3390/ma10060655

Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures

Jianping Li, Mingxi Zhao, Yongsheng Liu, Nan Chai, Fang Ye, Hailong Qin, Laifei Cheng, Litong Zhang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

SiBCN ceramics were introduced into porous Si₃N₄ ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N₂ atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si₃N₄ and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si₃N₄. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

Original language	English
Article number	655
Journal	Materials
Volume	10
Issue number	6
DOIs	https://doi.org/10.3390/ma10060655
State	Published - 2017

Keywords

Chemical vapor deposition and infiltration
Dielectric properties
Electromagnetic wave absorbing properties
Heat treatment
Siliconboron carbonitride ceramic

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10.3390/ma10060655

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title = "Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures",

abstract = "SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.",

keywords = "Chemical vapor deposition and infiltration, Dielectric properties, Electromagnetic wave absorbing properties, Heat treatment, Siliconboron carbonitride ceramic",

author = "Jianping Li and Mingxi Zhao and Yongsheng Liu and Nan Chai and Fang Ye and Hailong Qin and Laifei Cheng and Litong Zhang",

note = "Publisher Copyright: {\textcopyright} 2017 by the authors.",

year = "2017",

doi = "10.3390/ma10060655",

language = "英语",

volume = "10",

journal = "Materials",

issn = "1996-1944",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "6",

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TY - JOUR

T1 - Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures

AU - Li, Jianping

AU - Zhao, Mingxi

AU - Liu, Yongsheng

AU - Chai, Nan

AU - Ye, Fang

AU - Qin, Hailong

AU - Cheng, Laifei

AU - Zhang, Litong

PY - 2017

Y1 - 2017

N2 - SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

AB - SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

KW - Chemical vapor deposition and infiltration

KW - Dielectric properties

KW - Electromagnetic wave absorbing properties

KW - Heat treatment

KW - Siliconboron carbonitride ceramic

UR - http://www.scopus.com/inward/record.url?scp=85020843964&partnerID=8YFLogxK

U2 - 10.3390/ma10060655

DO - 10.3390/ma10060655

M3 - 文章

AN - SCOPUS:85020843964

SN - 1996-1944

VL - 10

JO - Materials

JF - Materials

IS - 6

M1 - 655

ER -

Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures

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Keywords

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