TY - JOUR
T1 - Metal halide perovskites for resistive switching memory devices and artificial synapses
AU - Li, Bixin
AU - Hui, Wei
AU - Ran, Xueqin
AU - Xia, Yingdong
AU - Xia, Fei
AU - Chao, Lingfeng
AU - Chen, Yonghua
AU - Huang, Wei
N1 - Publisher Copyright:
© 2019 The Royal Society of Chemistry.
PY - 2019
Y1 - 2019
N2 - Rapid progress of digital communications in the Big Data and Internet of things has stimulated the exploration of next-generation data storage devices. Among various candidates, resistive switching (RS) memory devices and artificial synapses are in the spotlight due to their low power consumption, downscaling potential, and fast operation speed. The exceptional electronic and mechanical characteristics of metal halide perovskites (MHPs) have greatly promoted their application in nonvolatile high density, low-cost, and flexible memory devices. Here, we distill the current state-of-the-art and highlight recent advances of MHP based RS memory devices and artificial synapses. The general structure and characteristics of RS memory devices are first introduced. Afterwards we discuss the excellent memory behaviors accompanied by detailed working mechanisms. Finally, the current challenges and future development prospects are also discussed. This review article is expected to pave the way in the rational design of MHP based memory devices and artificial synapses with unprecedented performance improvement.
AB - Rapid progress of digital communications in the Big Data and Internet of things has stimulated the exploration of next-generation data storage devices. Among various candidates, resistive switching (RS) memory devices and artificial synapses are in the spotlight due to their low power consumption, downscaling potential, and fast operation speed. The exceptional electronic and mechanical characteristics of metal halide perovskites (MHPs) have greatly promoted their application in nonvolatile high density, low-cost, and flexible memory devices. Here, we distill the current state-of-the-art and highlight recent advances of MHP based RS memory devices and artificial synapses. The general structure and characteristics of RS memory devices are first introduced. Afterwards we discuss the excellent memory behaviors accompanied by detailed working mechanisms. Finally, the current challenges and future development prospects are also discussed. This review article is expected to pave the way in the rational design of MHP based memory devices and artificial synapses with unprecedented performance improvement.
UR - http://www.scopus.com/inward/record.url?scp=85068216731&partnerID=8YFLogxK
U2 - 10.1039/c9tc02233c
DO - 10.1039/c9tc02233c
M3 - 文献综述
AN - SCOPUS:85068216731
SN - 2050-7534
VL - 7
SP - 7476
EP - 7493
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 25
ER -