TY - GEN
T1 - Meso-scale crystal plasticity modeling of sintered silver nanoparticles in typical interconnected structures
AU - Long, Xu
AU - Chong, Kainan
AU - Chang, Chao
AU - Su, Yutai
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - As a widely used die-attach material for interconnected structures, sintered silver nanoparticles (AgNPs) exhibit high electrical conductivity and excellent thermal conductivity properties. This paper develops a framework of crystal plasticity (CP) finite element method from the dislocation slip mechanism and applies it to interconnected structure of sintered AgNP materials, based on which the thermal stress simulation under temperature cycling is completed. Firstly, a polycrystalline model for sintered AgNP with the required meso-scale structure is established using Abaqus software. Further, the macroscopic stress-strain behavior for sintered AgNP is accurately described by defining the CP constitutive parameters, which are directly influenced by the crystal orientations and slip systems. By the comparison of the simulation results and the experimental data, the validity and reasonableness of the proposed model are verified. Finally, a typical interconnect structure in power modules with the sintered AgNP material between the SiC chip and the metallization layer is established. By applying the temperature cycling to the entire interconnected structure, the temperature and stress distribution characteristics of the sintered AgNP layer are analyzed. The results show that the distributions of temperature and stress differ between the different grains due to differences in grain orientation and slip system orientation. Notably, significant stress concentrations are found in the area around the pores, indicating that cracks are likely to develop along the pores and expand further, leading to fracture of the material.
AB - As a widely used die-attach material for interconnected structures, sintered silver nanoparticles (AgNPs) exhibit high electrical conductivity and excellent thermal conductivity properties. This paper develops a framework of crystal plasticity (CP) finite element method from the dislocation slip mechanism and applies it to interconnected structure of sintered AgNP materials, based on which the thermal stress simulation under temperature cycling is completed. Firstly, a polycrystalline model for sintered AgNP with the required meso-scale structure is established using Abaqus software. Further, the macroscopic stress-strain behavior for sintered AgNP is accurately described by defining the CP constitutive parameters, which are directly influenced by the crystal orientations and slip systems. By the comparison of the simulation results and the experimental data, the validity and reasonableness of the proposed model are verified. Finally, a typical interconnect structure in power modules with the sintered AgNP material between the SiC chip and the metallization layer is established. By applying the temperature cycling to the entire interconnected structure, the temperature and stress distribution characteristics of the sintered AgNP layer are analyzed. The results show that the distributions of temperature and stress differ between the different grains due to differences in grain orientation and slip system orientation. Notably, significant stress concentrations are found in the area around the pores, indicating that cracks are likely to develop along the pores and expand further, leading to fracture of the material.
KW - crystal plasticity
KW - sintered AgNP
KW - temperature cycling
KW - thermomechanical coupling
UR - http://www.scopus.com/inward/record.url?scp=85191752359&partnerID=8YFLogxK
U2 - 10.1109/ICEPT59018.2023.10492057
DO - 10.1109/ICEPT59018.2023.10492057
M3 - 会议稿件
AN - SCOPUS:85191752359
T3 - 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023
BT - 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Conference on Electronic Packaging Technology, ICEPT 2023
Y2 - 8 August 2023 through 11 August 2023
ER -