Abstract
Electrically pumped random lasers are realized in ZnO nanocrystallite films in a simple metal-oxide-semiconductor structure. By introducing an i-ZnO layer, a threshold current of 6.5 mA is obtained. The reported results provide a simple route to electrically pumped random lasing (see figure) with relatively low threshold, a significant step towards the future applications of this kind of laser. (Fig. Represented)
Original language | English |
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Pages (from-to) | 1877-1881 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 22 |
Issue number | 16 |
DOIs | |
State | Published - 22 Apr 2010 |
Externally published | Yes |