Low-temperature sintering and high-frequency dielectric properties of ZTS ceramics with V₂O₅–B₂O₃ addition

The effects of different binary sintering additives of V₂O₅–B₂O₃ on the high frequency dielectric properties of ZnO–TiO₂–SnO₂ ceramics were investigated in order to further reduce the sintering temperature of ceramics and improve the properties of ceramics. In this study, compared with single V₂O₅ forming liquid phase at high temperature, V₂O₅–B₂O₃ can further activate the reaction at the interface between the V-rich liquid phase and ZnO grains during sintering. The temperature of rutile phase was reduced from 950 to 900 °C by the binary sintering aid, and the ZnO–TiO₂–SnO₂ ceramic with a density of 5.07 g/cm³ was successfully sintered at 900 °C. The optimal ratio of binary sintering additive is V₂O₅:B₂O₃ = 3:1. Compared with the single sintering aid V₂O₅, the binary sintering additive V₂O₅–B₂O₃ can effectively inhibit the abnormal growth of grains and ensure the low temperature sintering of the material while still maintaining its excellent dielectric properties. The property of the ZTS ceramics is ε _r = 29.2, tanδ = 5.32 × 10⁻⁴ when the sintering temperature is 900 °C.