Lead chalcogenide thermoelectric materials

Shan Li; Xinyue Zhang; Yucheng Lan; Jun Mao; Yanzhong Pei; Qian Zhang

doi:10.1007/978-3-030-12057-3_5

Lead chalcogenide thermoelectric materials

Shan Li, Xinyue Zhang, Yucheng Lan, Jun Mao, Yanzhong Pei, Qian Zhang

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Lead chalcogenides have long been studied as thermoelectric (TE) materials since the 1950s due to unique electrical and thermal transport properties. The unremitting efforts during the past two decades give rise to the high TE figure of merit ZT values in both n- and p-type lead chalcogenides. Many encouraging breakthroughs trigger us to systematically understand the underlying physical mechanism of the optimization strategies. In this chapter, we first discuss band engineering strategies for the recent advances in high-performance lead chalcogenides. Then the strategies for increasing average ZT from optimizing concentration of charge carriers will be elucidated. Finally, the microstructural manipulation for high thermoelectric performances of lead chalcogenides will be presented.

Original language	English
Title of host publication	Novel Thermoelectric Materials and Device Design Concepts
Publisher	Springer International Publishing
Pages	83-104
Number of pages	22
ISBN (Electronic)	9783030120573
ISBN (Print)	9783030120566
DOIs	https://doi.org/10.1007/978-3-030-12057-3_5
State	Published - 1 Jan 2019
Externally published	Yes

Keywords

Average zt
Band engineering
Lead chalcogenides
Microstructural manipulation
Optimizing concentration of charge carriers
Thermoelectric materials

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10.1007/978-3-030-12057-3_5

Cite this

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AU - Li, Shan

AU - Zhang, Xinyue

AU - Lan, Yucheng

AU - Mao, Jun

AU - Pei, Yanzhong

AU - Zhang, Qian

N1 - Publisher Copyright: © Springer Nature Switzerland AG 2019.

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Lead chalcogenide thermoelectric materials

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Keywords

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