TY - JOUR
T1 - Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors
AU - Yu, Pengfei
AU - Xu, Yadong
AU - Chen, Yongren
AU - Song, Jie
AU - Zhu, Yi
AU - Zhang, Meijing
AU - Zhang, Binggang
AU - Wang, Yu
AU - Li, Wei
AU - Luan, Lijun
AU - Du, Yuanyuan
AU - Ma, Jing
AU - Zheng, Jiahong
AU - Li, Zhuo
AU - Bai, Min
AU - Li, Hui
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2018/2/1
Y1 - 2018/2/1
N2 - Radiation detectors with different thickness are needed to detect gamma rays with various energies. In this paper, a post-growth annealing method was used to improve the properties of CdMnTe:In (CMT:In) crystals with different thickness for gamma-ray detectors. The results indicated that Te inclusions in CMT:In crystals with different thickness were reduced remarkably after annealing. Both the resistivity and IR transmittance of annealed CMT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detectors fabricated by annealed CMT:In slices with 1 mm, 2 mm and 5 mm thickness, the energy resolutions were enhanced about 252%, 193% and 141%, respectively. And (μτ)e values were enhanced about 80%, 80% and 76%, respectively. The performance of the detectors was greatly improved after annealing.
AB - Radiation detectors with different thickness are needed to detect gamma rays with various energies. In this paper, a post-growth annealing method was used to improve the properties of CdMnTe:In (CMT:In) crystals with different thickness for gamma-ray detectors. The results indicated that Te inclusions in CMT:In crystals with different thickness were reduced remarkably after annealing. Both the resistivity and IR transmittance of annealed CMT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detectors fabricated by annealed CMT:In slices with 1 mm, 2 mm and 5 mm thickness, the energy resolutions were enhanced about 252%, 193% and 141%, respectively. And (μτ)e values were enhanced about 80%, 80% and 76%, respectively. The performance of the detectors was greatly improved after annealing.
KW - A1. Characterization
KW - A2. Bridgman technique
KW - B1. Cadmium compounds
KW - B2 Semiconducting II–VI materials
UR - http://www.scopus.com/inward/record.url?scp=85034635472&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2017.11.012
DO - 10.1016/j.jcrysgro.2017.11.012
M3 - 文章
AN - SCOPUS:85034635472
SN - 0022-0248
VL - 483
SP - 94
EP - 101
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -