TY - JOUR
T1 - InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation
AU - Alqahtani, Mahdi
AU - Sathasivam, Sanjayan
AU - Alhassan, Abdullah
AU - Cui, Fan
AU - Benjaber, Sultan
AU - Blackman, Chris
AU - Zhang, Bin
AU - Qin, Yong
AU - Parkin, Ivan P.
AU - Nakamura, Shuji
AU - Liu, Huiyun
AU - Wu, Jiang
N1 - Publisher Copyright:
© Copyright 2018 American Chemical Society.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - Indium gallium nitride (InGaN) is an attractive semiconductor, with a tunable direct bandgap for photoelectrochemical water splitting, but it corrodes in aqueous electrolytes. Cobalt oxide (CoOx) is a promising cocatalyst to protect photoelectrodes and accelerate the charge transfer. CoOx is earth-abundant and stable in extremely alkaline conditions and shows high activity for the oxygen evolution reaction (OER). In this work, we demonstrate that CoOx directly deposited onto InGaN/GaN multiple quantum well photoanodes exhibits excellent activity and stability in a strong alkaline electrolyte, 1 M NaOH (pH = 13.7), for water oxidation up to 28 h, while a reference sample without the catalyst degraded rapidly in the alkaline electrolyte. Under simulated solar illumination, the CoOx-modified InGaN/GaN quantum well photoanode showed a high photocurrent density of 1.26 mA cm-2 at 1.23 V and an onset potential of -0.03 V versus a reversible hydrogen electrode.
AB - Indium gallium nitride (InGaN) is an attractive semiconductor, with a tunable direct bandgap for photoelectrochemical water splitting, but it corrodes in aqueous electrolytes. Cobalt oxide (CoOx) is a promising cocatalyst to protect photoelectrodes and accelerate the charge transfer. CoOx is earth-abundant and stable in extremely alkaline conditions and shows high activity for the oxygen evolution reaction (OER). In this work, we demonstrate that CoOx directly deposited onto InGaN/GaN multiple quantum well photoanodes exhibits excellent activity and stability in a strong alkaline electrolyte, 1 M NaOH (pH = 13.7), for water oxidation up to 28 h, while a reference sample without the catalyst degraded rapidly in the alkaline electrolyte. Under simulated solar illumination, the CoOx-modified InGaN/GaN quantum well photoanode showed a high photocurrent density of 1.26 mA cm-2 at 1.23 V and an onset potential of -0.03 V versus a reversible hydrogen electrode.
KW - cobalt oxides
KW - indium gallium nitrides
KW - photoanodes
KW - photoelectrochemical water splitting
KW - quantum wells
UR - http://www.scopus.com/inward/record.url?scp=85064442224&partnerID=8YFLogxK
U2 - 10.1021/acsaem.8b01387
DO - 10.1021/acsaem.8b01387
M3 - 文章
AN - SCOPUS:85064442224
SN - 2574-0962
VL - 1
SP - 6417
EP - 6424
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 11
ER -
