Influence of sputtering power on the phase transition performance of VO2 thin films grown by magnetron sputtering

Y. Y. Luo; S. S. Pan; S. C. Xu; L. Zhong; H. Wang; G. H. Li

doi:10.1016/j.jallcom.2015.12.222

Influence of sputtering power on the phase transition performance of VO₂ thin films grown by magnetron sputtering

Y. Y. Luo, S. S. Pan, S. C. Xu, L. Zhong, H. Wang, G. H. Li

CAS - Institute of Solid State Physics

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

The influence of sputtering power on the electrical and infrared properties of VO₂ thin films was investigated. It was found that the controlling of sputtering power is very important in realizing the pure VO₂ (M) thin film. The thin films grown at the sputtering powers of 350 W and above have a similar phase transition behavior to bulk VO₂. The infrared transmittance and electrical resistance of the VO₂ thin film also depend on the sputtering power, and the hysteresis width is controlled by the size effect. The film thickness and defect density affect the amplitudes of the phase transition and phase transition temperature.

Original language	English
Pages (from-to)	626-631
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	664
DOIs	https://doi.org/10.1016/j.jallcom.2015.12.222
State	Published - 15 Apr 2016
Externally published	Yes

Keywords

Electrical resistance
Infrared transmittance
Phase transition
Sputtering power
Switching performance
VO thin film

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10.1016/j.jallcom.2015.12.222

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title = "Influence of sputtering power on the phase transition performance of VO2 thin films grown by magnetron sputtering",

abstract = "The influence of sputtering power on the electrical and infrared properties of VO2 thin films was investigated. It was found that the controlling of sputtering power is very important in realizing the pure VO2 (M) thin film. The thin films grown at the sputtering powers of 350 W and above have a similar phase transition behavior to bulk VO2. The infrared transmittance and electrical resistance of the VO2 thin film also depend on the sputtering power, and the hysteresis width is controlled by the size effect. The film thickness and defect density affect the amplitudes of the phase transition and phase transition temperature.",

keywords = "Electrical resistance, Infrared transmittance, Phase transition, Sputtering power, Switching performance, VO thin film",

author = "Luo, {Y. Y.} and Pan, {S. S.} and Xu, {S. C.} and L. Zhong and H. Wang and Li, {G. H.}",

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T1 - Influence of sputtering power on the phase transition performance of VO2 thin films grown by magnetron sputtering

AU - Luo, Y. Y.

AU - Pan, S. S.

AU - Xu, S. C.

AU - Zhong, L.

AU - Wang, H.

AU - Li, G. H.

PY - 2016/4/15

Y1 - 2016/4/15

N2 - The influence of sputtering power on the electrical and infrared properties of VO2 thin films was investigated. It was found that the controlling of sputtering power is very important in realizing the pure VO2 (M) thin film. The thin films grown at the sputtering powers of 350 W and above have a similar phase transition behavior to bulk VO2. The infrared transmittance and electrical resistance of the VO2 thin film also depend on the sputtering power, and the hysteresis width is controlled by the size effect. The film thickness and defect density affect the amplitudes of the phase transition and phase transition temperature.

AB - The influence of sputtering power on the electrical and infrared properties of VO2 thin films was investigated. It was found that the controlling of sputtering power is very important in realizing the pure VO2 (M) thin film. The thin films grown at the sputtering powers of 350 W and above have a similar phase transition behavior to bulk VO2. The infrared transmittance and electrical resistance of the VO2 thin film also depend on the sputtering power, and the hysteresis width is controlled by the size effect. The film thickness and defect density affect the amplitudes of the phase transition and phase transition temperature.

KW - Electrical resistance

KW - Infrared transmittance

KW - Phase transition

KW - Sputtering power

KW - Switching performance

KW - VO thin film

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U2 - 10.1016/j.jallcom.2015.12.222

DO - 10.1016/j.jallcom.2015.12.222

M3 - 文章

AN - SCOPUS:84954349606

SN - 0925-8388

VL - 664

SP - 626

EP - 631

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Influence of sputtering power on the phase transition performance of VO₂ thin films grown by magnetron sputtering

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Keywords

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