Abstract
A series of Si6-xAlxOxN8-x with different x values (x=0-4.2) was obtained by pressureless sintering using Al2O3 and AlN as additives. The influences of different x values on the dielectric properties of Si6-xAlxO xN8-x were investigated in detail. It was found that the difference in the dielectric properties of Si6-xAlxO xN8-x was mainly due to the simultaneous dissolution of Al2O3 and AlN in β-Si3N4. The dielectric constant increases with equivalent substitution of Al-O for Si-N. The high dielectric constant could be attributed to the ionic relaxation polarisation.
Original language | English |
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Pages (from-to) | 423-425 |
Number of pages | 3 |
Journal | Materials Research Innovations |
Volume | 14 |
Issue number | 5 |
DOIs | |
State | Published - 1 Nov 2010 |
Keywords
- β-SiAlON
- Dielectric properties
- Ionic relaxation polarisation