Influence of different x values on dielectric properties of β-Si 6-xAlxOxN8-x ceramics

J. Q. Li, W. C. Zhou, F. Luo, Z. F. Zhu, J. Z. Ma

Research output: Contribution to journalArticlepeer-review

Abstract

A series of Si6-xAlxOxN8-x with different x values (x=0-4.2) was obtained by pressureless sintering using Al2O3 and AlN as additives. The influences of different x values on the dielectric properties of Si6-xAlxO xN8-x were investigated in detail. It was found that the difference in the dielectric properties of Si6-xAlxO xN8-x was mainly due to the simultaneous dissolution of Al2O3 and AlN in β-Si3N4. The dielectric constant increases with equivalent substitution of Al-O for Si-N. The high dielectric constant could be attributed to the ionic relaxation polarisation.

Original languageEnglish
Pages (from-to)423-425
Number of pages3
JournalMaterials Research Innovations
Volume14
Issue number5
DOIs
StatePublished - 1 Nov 2010

Keywords

  • β-SiAlON
  • Dielectric properties
  • Ionic relaxation polarisation

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