Influence of deep level defects on carrier lifetime in CdZnTe:In

Rongrong Guo; Wanqi Jie; Ning Wang; Gangqiang Zha; Yadong Xu; Tao Wang; Xu Fu

doi:10.1063/1.4914159

Influence of deep level defects on carrier lifetime in CdZnTe:In

Rongrong Guo, Wanqi Jie, Ning Wang, Gangqiang Zha, Yadong Xu, Tao Wang, Xu Fu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining ²⁴¹Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

Original language	English
Article number	094502
Journal	Journal of Applied Physics
Volume	117
Issue number	9
DOIs	https://doi.org/10.1063/1.4914159
State	Published - 7 Mar 2015

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@article{0aa3cbfb18b74cd486388b8f925745ba,

title = "Influence of deep level defects on carrier lifetime in CdZnTe:In",

abstract = "The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining 241Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.",

author = "Rongrong Guo and Wanqi Jie and Ning Wang and Gangqiang Zha and Yadong Xu and Tao Wang and Xu Fu",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = mar,

day = "7",

doi = "10.1063/1.4914159",

language = "英语",

volume = "117",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Influence of deep level defects on carrier lifetime in CdZnTe:In

AU - Guo, Rongrong

AU - Jie, Wanqi

AU - Wang, Ning

AU - Zha, Gangqiang

AU - Xu, Yadong

AU - Wang, Tao

AU - Fu, Xu

PY - 2015/3/7

Y1 - 2015/3/7

N2 - The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining 241Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

AB - The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining 241Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

UR - http://www.scopus.com/inward/record.url?scp=84924249542&partnerID=8YFLogxK

U2 - 10.1063/1.4914159

DO - 10.1063/1.4914159

M3 - 文章

AN - SCOPUS:84924249542

SN - 0021-8979

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 094502

ER -

Influence of deep level defects on carrier lifetime in CdZnTe:In

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