Influence of deep level defects on carrier lifetime in CdZnTe:In

Rongrong Guo, Wanqi Jie, Ning Wang, Gangqiang Zha, Yadong Xu, Tao Wang, Xu Fu

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining 241Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

Original languageEnglish
Article number094502
JournalJournal of Applied Physics
Volume117
Issue number9
DOIs
StatePublished - 7 Mar 2015

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