Improving the microwave dielectric properties of Ti3SiC2powders by Al doping

Zhimin Li; Fa Luo; Chuangchuang He; Zi Yang; Peixian Li; Yue Hao

doi:10.1016/j.jallcom.2014.08.199

Improving the microwave dielectric properties of Ti₃SiC₂powders by Al doping

Zhimin Li, Fa Luo, Chuangchuang He, Zi Yang, Peixian Li, Yue Hao

School of Materials Sience and Engineering

Xidian University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Al-doped Ti₃SiC₂powders were synthesized by solid state reaction under a vacuum atmosphere. Results showed that Al doping effectively improved the purity of the as-prepared Ti₃SiC₂powders which had a narrow particle size distribution. The complex permittivities and reflection loss of Ti₃SiC₂samples were determined in the frequency range of 8.2-12.4 GHz. It was found that 20% Al-doped sample showed the greatest values in the real part ε′ and imaginary part ε″ of complex permittivity and the better reflection loss with an absorbing thickness of 2.1 mm. The mechanism of dielectric loss by Al doping was discussed.

Original language	English
Pages (from-to)	508-511
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	618
DOIs	https://doi.org/10.1016/j.jallcom.2014.08.199
State	Published - 5 Jan 2015

Keywords

Al doping
Dielectric properties
Microwave absorbing materials
TiSiC

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10.1016/j.jallcom.2014.08.199

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title = "Improving the microwave dielectric properties of Ti3SiC2powders by Al doping",

abstract = "Al-doped Ti3SiC2powders were synthesized by solid state reaction under a vacuum atmosphere. Results showed that Al doping effectively improved the purity of the as-prepared Ti3SiC2powders which had a narrow particle size distribution. The complex permittivities and reflection loss of Ti3SiC2samples were determined in the frequency range of 8.2-12.4 GHz. It was found that 20% Al-doped sample showed the greatest values in the real part ε′ and imaginary part ε″ of complex permittivity and the better reflection loss with an absorbing thickness of 2.1 mm. The mechanism of dielectric loss by Al doping was discussed.",

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AU - Li, Zhimin

AU - Luo, Fa

AU - He, Chuangchuang

AU - Yang, Zi

AU - Li, Peixian

AU - Hao, Yue

PY - 2015/1/5

Y1 - 2015/1/5

N2 - Al-doped Ti3SiC2powders were synthesized by solid state reaction under a vacuum atmosphere. Results showed that Al doping effectively improved the purity of the as-prepared Ti3SiC2powders which had a narrow particle size distribution. The complex permittivities and reflection loss of Ti3SiC2samples were determined in the frequency range of 8.2-12.4 GHz. It was found that 20% Al-doped sample showed the greatest values in the real part ε′ and imaginary part ε″ of complex permittivity and the better reflection loss with an absorbing thickness of 2.1 mm. The mechanism of dielectric loss by Al doping was discussed.

AB - Al-doped Ti3SiC2powders were synthesized by solid state reaction under a vacuum atmosphere. Results showed that Al doping effectively improved the purity of the as-prepared Ti3SiC2powders which had a narrow particle size distribution. The complex permittivities and reflection loss of Ti3SiC2samples were determined in the frequency range of 8.2-12.4 GHz. It was found that 20% Al-doped sample showed the greatest values in the real part ε′ and imaginary part ε″ of complex permittivity and the better reflection loss with an absorbing thickness of 2.1 mm. The mechanism of dielectric loss by Al doping was discussed.

KW - Al doping

KW - Dielectric properties

KW - Microwave absorbing materials

KW - TiSiC

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DO - 10.1016/j.jallcom.2014.08.199

M3 - 文章

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SN - 0925-8388

VL - 618

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EP - 511

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Improving the microwave dielectric properties of Ti₃SiC₂powders by Al doping

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Keywords

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