TY - JOUR
T1 - Improving the efficiency and stability of inverted perovskite solar cells by CuSCN-doped PEDOT:PSS
AU - Xu, Ligang
AU - Li, Yifan
AU - Zhang, Chi
AU - Liu, Yan
AU - Zheng, Chao
AU - Lv, Wen Zhen
AU - Li, Mingguang
AU - Chen, Yonghua
AU - Huang, Wei
AU - Chen, Runfeng
N1 - Publisher Copyright:
© 2019
PY - 2020/3
Y1 - 2020/3
N2 - Hole transport layer (HTL) is important in inverted perovskite solar cells (PSCs) to facilitate the hole extraction and suppress the charge recombination for high device performance. Based on the widely used HTL material of poly(ethylenedioxythiophene) (PEDOT):poly(styrenesulfonate) (PSS), we proposed a new HTL modification method using the widely available copper(I) thiocyanate (CuSCN); the doping of CuSCN NH3 [aq] in PEDOT:PSS followed by low-temperature annealing results in reduced energy barrier, improved charge extraction efficiency and increased the mean size of perovskite crystal of the PEDOT:PSS-CuSCN HTL-based inverted PSCs. Significantly improved device performance was observed with open current voltage over 1.0 V and power conversion efficiency (PCE) up to 15.3%, which is 16% higher in PCE than that of the PEDOT:PSS-based PSCs. More impressively, with a lower acidity than PEDOT:PSS, the PEDOT:PSS-CuSCN HTL enables excellent long-term stability of the inverted PSCs, exhibiting almost doubly improved device stability at the same storage condition. Thus, the successful application of CuSCN doping in PEDOT:PSS HTLs should provide a novel approach for the development of high-performance HTLs for highly efficient and stable PSCs.
AB - Hole transport layer (HTL) is important in inverted perovskite solar cells (PSCs) to facilitate the hole extraction and suppress the charge recombination for high device performance. Based on the widely used HTL material of poly(ethylenedioxythiophene) (PEDOT):poly(styrenesulfonate) (PSS), we proposed a new HTL modification method using the widely available copper(I) thiocyanate (CuSCN); the doping of CuSCN NH3 [aq] in PEDOT:PSS followed by low-temperature annealing results in reduced energy barrier, improved charge extraction efficiency and increased the mean size of perovskite crystal of the PEDOT:PSS-CuSCN HTL-based inverted PSCs. Significantly improved device performance was observed with open current voltage over 1.0 V and power conversion efficiency (PCE) up to 15.3%, which is 16% higher in PCE than that of the PEDOT:PSS-based PSCs. More impressively, with a lower acidity than PEDOT:PSS, the PEDOT:PSS-CuSCN HTL enables excellent long-term stability of the inverted PSCs, exhibiting almost doubly improved device stability at the same storage condition. Thus, the successful application of CuSCN doping in PEDOT:PSS HTLs should provide a novel approach for the development of high-performance HTLs for highly efficient and stable PSCs.
KW - CuSCN
KW - Hole transport layer
KW - Perovskite solar cells
KW - Power conversion efficiency
KW - Stability
UR - http://www.scopus.com/inward/record.url?scp=85076212378&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2019.110316
DO - 10.1016/j.solmat.2019.110316
M3 - 文章
AN - SCOPUS:85076212378
SN - 0927-0248
VL - 206
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
M1 - 110316
ER -
