Improvement of SiC-Si/MAS interface in the joints via in Situ synthesizing SiC nanowires

Improving the SiC-Si/MAS interface is essential for enhancing the SiC-Si/MAS joint strength. In this work, well-dispersed SiC nanowires (NWs) were in situ synthesized at the SiC-Si/MAS interface in the joints as the anchors, which made the fracture feature of the joints change from SiC-Si/MAS interface fracture to MAS fracture, resulting in an obvious improvement of the shear strength. The results showed that the average shear strength of the joints was increased by 49% by in situ synthesizing SiC NWs, which was primarily attributed to the excellent interface anchoring effects of SiC NWs involving the interfacial bonding anchoring between SiC NWs and SiC-Si layer and the mechanical interlocking anchoring between SiC NWs with the junctions and the surrounding grains. This study may provide new insight into the anchoring mechanisms and suggest a new design methodology for nanowire joints, leading to improved joint strength.