Improvement of crystalline quality of CdZnTe epilayers on GaAs(001) substrates with a two-step growth by Close Spaced Sublimation

Kun Cao; Wanqi Jie; Gangqiang Zha; Ruiqi Hu; Sihong Wu; Yawei Wang

doi:10.1016/j.vacuum.2019.03.036

Improvement of crystalline quality of CdZnTe epilayers on GaAs(001) substrates with a two-step growth by Close Spaced Sublimation

Kun Cao, Wanqi Jie, Gangqiang Zha, Ruiqi Hu, Sihong Wu, Yawei Wang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A two-step growth process of CdZnTe(001) epilayers on GaAs(001) substrates by Close Spaced Sublimation (CSS) is proposed. The first step, or a so-called pre-growth at low temperature of 350 °C generates more compact nucleation layer than the second step growth at 430 °C, which is more efficient for accelerating grain coalescence and annihilation of defect. Both the double crystal X-ray rocking curve (DCXRC) and the photoluminescence (PL) results prove that CdZnTe film with the best crystalline quality is obtained with the combination of the first step growth at 350 °C and the second growth at 430 °C. Increasing the second step growth temperature from 430 °C to 530 °C and 600 °C deteriorate films crystalline quality due to the increase in thermal stress and Zn content. Current-voltage (I–V) measurement and alpha-particle response test indicate that better crystalline quality in CZT film leads to both higher resistivity and better carrier transport property.

Original language	English
Pages (from-to)	319-324
Number of pages	6
Journal	Vacuum
Volume	164
DOIs	https://doi.org/10.1016/j.vacuum.2019.03.036
State	Published - Jun 2019

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title = "Improvement of crystalline quality of CdZnTe epilayers on GaAs(001) substrates with a two-step growth by Close Spaced Sublimation",

abstract = "A two-step growth process of CdZnTe(001) epilayers on GaAs(001) substrates by Close Spaced Sublimation (CSS) is proposed. The first step, or a so-called pre-growth at low temperature of 350 °C generates more compact nucleation layer than the second step growth at 430 °C, which is more efficient for accelerating grain coalescence and annihilation of defect. Both the double crystal X-ray rocking curve (DCXRC) and the photoluminescence (PL) results prove that CdZnTe film with the best crystalline quality is obtained with the combination of the first step growth at 350 °C and the second growth at 430 °C. Increasing the second step growth temperature from 430 °C to 530 °C and 600 °C deteriorate films crystalline quality due to the increase in thermal stress and Zn content. Current-voltage (I–V) measurement and alpha-particle response test indicate that better crystalline quality in CZT film leads to both higher resistivity and better carrier transport property.",

author = "Kun Cao and Wanqi Jie and Gangqiang Zha and Ruiqi Hu and Sihong Wu and Yawei Wang",

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year = "2019",

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doi = "10.1016/j.vacuum.2019.03.036",

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T1 - Improvement of crystalline quality of CdZnTe epilayers on GaAs(001) substrates with a two-step growth by Close Spaced Sublimation

AU - Cao, Kun

AU - Jie, Wanqi

AU - Zha, Gangqiang

AU - Hu, Ruiqi

AU - Wu, Sihong

AU - Wang, Yawei

PY - 2019/6

Y1 - 2019/6

N2 - A two-step growth process of CdZnTe(001) epilayers on GaAs(001) substrates by Close Spaced Sublimation (CSS) is proposed. The first step, or a so-called pre-growth at low temperature of 350 °C generates more compact nucleation layer than the second step growth at 430 °C, which is more efficient for accelerating grain coalescence and annihilation of defect. Both the double crystal X-ray rocking curve (DCXRC) and the photoluminescence (PL) results prove that CdZnTe film with the best crystalline quality is obtained with the combination of the first step growth at 350 °C and the second growth at 430 °C. Increasing the second step growth temperature from 430 °C to 530 °C and 600 °C deteriorate films crystalline quality due to the increase in thermal stress and Zn content. Current-voltage (I–V) measurement and alpha-particle response test indicate that better crystalline quality in CZT film leads to both higher resistivity and better carrier transport property.

AB - A two-step growth process of CdZnTe(001) epilayers on GaAs(001) substrates by Close Spaced Sublimation (CSS) is proposed. The first step, or a so-called pre-growth at low temperature of 350 °C generates more compact nucleation layer than the second step growth at 430 °C, which is more efficient for accelerating grain coalescence and annihilation of defect. Both the double crystal X-ray rocking curve (DCXRC) and the photoluminescence (PL) results prove that CdZnTe film with the best crystalline quality is obtained with the combination of the first step growth at 350 °C and the second growth at 430 °C. Increasing the second step growth temperature from 430 °C to 530 °C and 600 °C deteriorate films crystalline quality due to the increase in thermal stress and Zn content. Current-voltage (I–V) measurement and alpha-particle response test indicate that better crystalline quality in CZT film leads to both higher resistivity and better carrier transport property.

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DO - 10.1016/j.vacuum.2019.03.036

M3 - 文章

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SN - 0042-207X

VL - 164

SP - 319

EP - 324

JO - Vacuum

JF - Vacuum

ER -

Improvement of crystalline quality of CdZnTe epilayers on GaAs(001) substrates with a two-step growth by Close Spaced Sublimation

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