Abstract
We have fabricated 6 + 1-filament MgB2 wires using an internal Mg diffusion (IMD) process. For the 3 at% graphene (G) doped long wire with 1.4 mm diameter, the critical current is about 530 A at 4 T, which is 45% higher than that of the undoped sample. Moreover, the G doped wire has higher irreversible strain of 38% in comparison to the undoped one of 30% after 650 °C × 2 h annealing. The obtained results show that the G doped IMD wires with excellent superconductivity and mechanical property can compete with the conventional PIT wires in practical application.
Original language | English |
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Pages (from-to) | 305-307 |
Number of pages | 3 |
Journal | Materials Letters |
Volume | 227 |
DOIs | |
State | Published - 15 Sep 2018 |
Keywords
- Ceramics
- Functional
- IMD
- Metalic composites
- Microstructure