Abstract
Porous Si3N4-SiC composite ceramic was fabricated by infiltrating SiC coating with nano-scale crystals into porous β-Si3N4 ceramic via chemical vapor infiltration (CVI). Silica (SiO2) film was formed on the surface of rod-like Si3N4-SiC grains during oxidation at 1100°C in air. The as-received Si3N4-SiC/SiO2 composite ceramic attains a multi-shell microstructure, and exhibits reduced impedance mismatch, leading to excellent electromagnetic (EM) absorbing properties. The Si3N4-SiC/SiO2 fabricated by oxidation of Si3N4-SiC for 10h in air can achieve a reflection loss of -30dB (>99.9% absorption) at 8.7GHz when the sample thickness is 3.8mm. When the sample thickness is 3.5mm, reflection loss of Si3N4-SiC/SiO2 is lower than -10dB (>90% absorption) in the frequency range 8.3-12.4GHz, the effective absorption bandwidth is 4.1GHz.
Original language | English |
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Pages (from-to) | 2173-2180 |
Number of pages | 8 |
Journal | Journal of the European Ceramic Society |
Volume | 33 |
Issue number | 11 |
DOIs | |
State | Published - Oct 2013 |
Keywords
- Complex permittivity
- Reflection loss
- SiC
- SiO