I-V characteristics of HgI2 crystal with sputtered Au and electroless Au contacts

Gang Xu; Wan Qi Jie; Gao Hong Li

I-V characteristics of HgI₂ crystal with sputtered Au and electroless Au contacts

Gang Xu, Wan Qi Jie, Gao Hong Li

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

I-V characteristics of HgI₂ crystal wafers with the contacts of sputtered gold (Au/HgI₂) and coated chloroauric acid (AuCl₃/HgI₂) were studied using Agilent4155 CVIV instrument. The results indicate that the fitting data b, representing ohmic contacts proterties, were 0.89 and 1.06, respectively. The resistivity of HgI₂ crystal was 10⁹ Ω·cm. The calculated value of contact resistance, 1.6×10⁷Ω for Au/HgI₂ and 4.3×10⁶ Ω for AuCl₃/HgI₂, showed that AuCl₃/HgI₂ could generate lower contact resistance. Au electrode formed from decomposition of chloroauric acid produces better ohmic contacts comparing with that of sputtering gold. The sputtering process deteriorated the interface quality of HgI₂ crystal wafers, resulting worse ohmic contacts properties.

Original language	English
Pages (from-to)	1008-1011
Number of pages	4
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	38
Issue number	4
State	Published - Aug 2009

Keywords

Au
AuCl
Contact properties
HgI
I-V Character

Cite this

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title = "I-V characteristics of HgI2 crystal with sputtered Au and electroless Au contacts",

abstract = "I-V characteristics of HgI2 crystal wafers with the contacts of sputtered gold (Au/HgI2) and coated chloroauric acid (AuCl3/HgI2) were studied using Agilent4155 CVIV instrument. The results indicate that the fitting data b, representing ohmic contacts proterties, were 0.89 and 1.06, respectively. The resistivity of HgI2 crystal was 109 Ω·cm. The calculated value of contact resistance, 1.6×107Ω for Au/HgI2 and 4.3×106 Ω for AuCl3/HgI2, showed that AuCl3/HgI2 could generate lower contact resistance. Au electrode formed from decomposition of chloroauric acid produces better ohmic contacts comparing with that of sputtering gold. The sputtering process deteriorated the interface quality of HgI2 crystal wafers, resulting worse ohmic contacts properties.",

keywords = "Au, AuCl, Contact properties, HgI, I-V Character",

author = "Gang Xu and Jie, {Wan Qi} and Li, {Gao Hong}",

year = "2009",

month = aug,

language = "英语",

volume = "38",

pages = "1008--1011",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "4",

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TY - JOUR

T1 - I-V characteristics of HgI2 crystal with sputtered Au and electroless Au contacts

AU - Xu, Gang

AU - Jie, Wan Qi

AU - Li, Gao Hong

PY - 2009/8

Y1 - 2009/8

N2 - I-V characteristics of HgI2 crystal wafers with the contacts of sputtered gold (Au/HgI2) and coated chloroauric acid (AuCl3/HgI2) were studied using Agilent4155 CVIV instrument. The results indicate that the fitting data b, representing ohmic contacts proterties, were 0.89 and 1.06, respectively. The resistivity of HgI2 crystal was 109 Ω·cm. The calculated value of contact resistance, 1.6×107Ω for Au/HgI2 and 4.3×106 Ω for AuCl3/HgI2, showed that AuCl3/HgI2 could generate lower contact resistance. Au electrode formed from decomposition of chloroauric acid produces better ohmic contacts comparing with that of sputtering gold. The sputtering process deteriorated the interface quality of HgI2 crystal wafers, resulting worse ohmic contacts properties.

AB - I-V characteristics of HgI2 crystal wafers with the contacts of sputtered gold (Au/HgI2) and coated chloroauric acid (AuCl3/HgI2) were studied using Agilent4155 CVIV instrument. The results indicate that the fitting data b, representing ohmic contacts proterties, were 0.89 and 1.06, respectively. The resistivity of HgI2 crystal was 109 Ω·cm. The calculated value of contact resistance, 1.6×107Ω for Au/HgI2 and 4.3×106 Ω for AuCl3/HgI2, showed that AuCl3/HgI2 could generate lower contact resistance. Au electrode formed from decomposition of chloroauric acid produces better ohmic contacts comparing with that of sputtering gold. The sputtering process deteriorated the interface quality of HgI2 crystal wafers, resulting worse ohmic contacts properties.

KW - Au

KW - AuCl

KW - Contact properties

KW - HgI

KW - I-V Character

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M3 - 文章

AN - SCOPUS:70249142049

SN - 1000-985X

VL - 38

SP - 1008

EP - 1011

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 4

ER -

I-V characteristics of HgI₂ crystal with sputtered Au and electroless Au contacts

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Keywords

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