Abstract
Using a sol-gel method Pb0.8Ba0.2ZrO3 (PBZ) thin film with a thickness of ~320 nm was fabricated on Pt(111)/TiO x/SiO2/Si substrate. The analysis results of XRD, SEM, and dielectric properties revealed that this thin film is a (111)-oriented nano-scaled antiferroelectric and ferroelectric two-phase coexisted relaxor. Calculations of dielectric tunability (η) and figure-of-merit (FOM) at room temperature display a maximum value of 75% at E = 560 kV/cm and ~236, respectively. High-temperature stability (η > 75% and FOM > 230 at 560 kV/cm in the range from 300 to 380 K) and high breakdown dielectric strength (leakage current < 1 nA at 598 kV/cm) make the PBZ thin film to be an attractive material for applications of tunable devices.
Original language | English |
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Pages (from-to) | 1852-1856 |
Number of pages | 5 |
Journal | Journal of the American Ceramic Society |
Volume | 96 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2013 |