TY - JOUR
T1 - High Thermal Conductive Ga2O3 MOSFET with Diamond Substrate and its Simulation Analysis
AU - Liu, Duo
AU - Guan, He
AU - Tang, Yong Chuan
AU - Wang, Ying
N1 - Publisher Copyright:
© The Minerals, Metals & Materials Society 2025.
PY - 2025
Y1 - 2025
N2 - Gallium oxide (Ga2O3) material has an ultra-wide bandwidth of 4.9 eV and a breakdown field strength of up to 8 MV/cm, which holds great promise in the field of high-power and low-power devices. However, due to the extremely low thermal conductivity of β-Ga2O3, between 10 and 27 W/(m K) at room temperature, the self-heating effect of devices based on this material is significant. We have carried out a study of lateral β-Ga2O3 MOSFET device materials and dimensions to improve the self-heating effect, device simulation and digital fitting, simulation and analysis of silicon, silicon carbide, aluminum nitride, and diamond substrate compared to gallium oxide in the self-heating effect of the advantages of exploring the device gate length and the gate leakage spacing on the device heat dissipation and the optimization of parameters. Finally, this article proposed a high thermal conductivity diamond substrate device structure, using gate length lg = 8 μm, gate drain spacing lgd = 13 μm, and gate source spacing lgs = 7/9 μm. The peak temperature of the device is reduced by 65% compared to the gallium oxide substrate, providing a theoretical basis for the optimization of thermal design of gallium oxide devices in the future.
AB - Gallium oxide (Ga2O3) material has an ultra-wide bandwidth of 4.9 eV and a breakdown field strength of up to 8 MV/cm, which holds great promise in the field of high-power and low-power devices. However, due to the extremely low thermal conductivity of β-Ga2O3, between 10 and 27 W/(m K) at room temperature, the self-heating effect of devices based on this material is significant. We have carried out a study of lateral β-Ga2O3 MOSFET device materials and dimensions to improve the self-heating effect, device simulation and digital fitting, simulation and analysis of silicon, silicon carbide, aluminum nitride, and diamond substrate compared to gallium oxide in the self-heating effect of the advantages of exploring the device gate length and the gate leakage spacing on the device heat dissipation and the optimization of parameters. Finally, this article proposed a high thermal conductivity diamond substrate device structure, using gate length lg = 8 μm, gate drain spacing lgd = 13 μm, and gate source spacing lgs = 7/9 μm. The peak temperature of the device is reduced by 65% compared to the gallium oxide substrate, providing a theoretical basis for the optimization of thermal design of gallium oxide devices in the future.
KW - COMSOL
KW - MOSFET
KW - self-heating effect
KW - β-GaO
UR - http://www.scopus.com/inward/record.url?scp=105005800802&partnerID=8YFLogxK
U2 - 10.1007/s11664-025-11965-w
DO - 10.1007/s11664-025-11965-w
M3 - 文章
AN - SCOPUS:105005800802
SN - 0361-5235
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
ER -