High Thermal Conductive Ga2O3 MOSFET with Diamond Substrate and its Simulation Analysis

Duo Liu, He Guan, Yong Chuan Tang, Ying Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Gallium oxide (Ga2O3) material has an ultra-wide bandwidth of 4.9 eV and a breakdown field strength of up to 8 MV/cm, which holds great promise in the field of high-power and low-power devices. However, due to the extremely low thermal conductivity of β-Ga2O3, between 10 and 27 W/(m K) at room temperature, the self-heating effect of devices based on this material is significant. We have carried out a study of lateral β-Ga2O3 MOSFET device materials and dimensions to improve the self-heating effect, device simulation and digital fitting, simulation and analysis of silicon, silicon carbide, aluminum nitride, and diamond substrate compared to gallium oxide in the self-heating effect of the advantages of exploring the device gate length and the gate leakage spacing on the device heat dissipation and the optimization of parameters. Finally, this article proposed a high thermal conductivity diamond substrate device structure, using gate length lg = 8 μm, gate drain spacing lgd = 13 μm, and gate source spacing lgs = 7/9 μm. The peak temperature of the device is reduced by 65% compared to the gallium oxide substrate, providing a theoretical basis for the optimization of thermal design of gallium oxide devices in the future.

Original languageEnglish
JournalJournal of Electronic Materials
DOIs
StateAccepted/In press - 2025

Keywords

  • COMSOL
  • MOSFET
  • self-heating effect
  • β-GaO

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