High-speed processing of silicon carbide ceramic by high repetition frequency femtosecond laser

Jian Zhang, Feng Geng, Zhichao Liu, Qinghua Zhang, Qiao Xu, Yaguo Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, silicon carbide ceramic (SiC) was processed by a high repetition frequency femtosecond laser with a wavelength of 1030 nm. We have analyzed the affection of different parameters to the material removal rate and researched surface oxidation phenomenon during laser scanning. The surface oxidation phenomenon is a major factor that affects the material removal rate of SiC ceramic and may even lead to failure of material removal. The oxidation phenomenon of the processing area is directly related to the laser induced temperature rise. Increasing laser scanning speed and increasing laser scanning interval are effective methods to reduce the oxidation phenomenon. The experiments have demonstrated that high-speed processing of SiC ceramic by high repetition frequency femtosecond laser is available under certain parameters.

Original languageEnglish
Title of host publicationTwelfth International Conference on Information Optics and Photonics, CIOP 2021
EditorsYue Yang
PublisherSPIE
ISBN (Electronic)9781510649897
DOIs
StatePublished - 2021
Externally publishedYes
Event12th International Conference on Information Optics and Photonics, CIOP 2021 - Xi'an, China
Duration: 23 Jul 202126 Jul 2021

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume12057
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference12th International Conference on Information Optics and Photonics, CIOP 2021
Country/TerritoryChina
CityXi'an
Period23/07/2126/07/21

Keywords

  • Femtosecond laser
  • Laser processing
  • Silicon carbide ceramic

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