TY - JOUR
T1 - High-q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
AU - Fang, Cizhe
AU - Yang, Qiyu
AU - Yuan, Qingchen
AU - Gan, Xuetao
AU - Zhao, Jianlin
AU - Shao, Yao
AU - Liu, Yan
AU - Han, Genquan
AU - Hao, Yue
N1 - Publisher Copyright:
© The Author(s) 2021. Published by Institute of Optics and Electronics, Chinese Academy of Sciences. 200030-1.
PY - 2021
Y1 - 2021
N2 - The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.
AB - The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.
KW - All-dielectric metasurface
KW - Bound states in the continuum
KW - Optical nonlinearity
KW - Topological configuration
UR - http://www.scopus.com/inward/record.url?scp=85110389927&partnerID=8YFLogxK
U2 - 10.29026/oea.2021.200030
DO - 10.29026/oea.2021.200030
M3 - 文章
AN - SCOPUS:85110389927
SN - 2096-4579
VL - 4
JO - Opto-Electronic Advances
JF - Opto-Electronic Advances
IS - 6
M1 - 200030
ER -