@inproceedings{ece59f81a3b744d2b7b14362eb9bb941,
title = "Hg(3-3x)In2xTe3: A novel semiconductor material for near infrared photovoltaic detectors",
abstract = "A new photoelectronic semiconductor crystal, mercury indium telluride (MIT), with dimensions of 15mm in diameter and 175mm in length has been successfully grown by using the vertical Bridgman method (VB) at the optimized growth conditions. The crystal was determined through the power X-ray diffraction to be defect zinc-blende structure with the space group F{\=4}3m. The transmittance spectra from 2.5 to 25μm shows high middle and far-infrared transmittance of 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption. Hall measurements at room temperature show that the resistivity, carrier density and mobility of the MIT crystal are 4.79×102 Ωcm, 2.83×1013 cm-3 and 4.60×102 cm 2V-1s-1, respectively. The reduction of carrier mobility and the increase of the resistivity are related to the adding of In2Te3 into HgTe, which changes the energy band structure of the crystal.",
keywords = "Crystal growth, Infrared detectors, Mercury compounds, Photovoltaic detectors, Semiconductor materials",
author = "Linghang Wang and Wanqi Jie",
year = "2007",
language = "英语",
isbn = "1424410983",
series = "Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007",
pages = "133--136",
booktitle = "Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007",
note = "2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007 ; Conference date: 03-06-2007 Through 04-06-2007",
}
